Datasheet IRF530 (On Semiconductor) - 3
| Hersteller | On Semiconductor |
| Beschreibung | TMOS E−FET Power Field Effect. Transistor N−Channel Enhancement−Mode Silicon Gate |
| Seiten / Seite | 7 / 3 — IRF530. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| Dateiformat / Größe | PDF / 192 Kb |
| Dokumentensprache | Englisch |
IRF530. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
Textversion des Dokuments
IRF530 TYPICAL ELECTRICAL CHARACTERISTICS
30 30 9 V TJ = 25°C VDS ≥ 10 V TJ = −55°C VGS = 10 V 8 V 25 25 25°C 100°C 7 V (AMPS) (AMPS) 20 20 15 15 6 V 10 10 , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.20 0.14 (OHMS) (OHMS) V T GS = 10 V J = 25°C 0.18 T 0.13 ANCE J = 100°C 0.16 ANCE 0.12 0.14 RESIST RESIST 0.12 0.11 25°C VGS = 10 V 0.10 0.10 15 V O−SOURCE 0.08 O−SOURCE 0.09 0.06 − 55°C 0.08 0.04 , DRAIN−T , DRAIN−T 0.02 0.07 DS(on) 0.00 DS(on) R R 0.06 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 3 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.0 1000 VGS = 10 V VGS = 0 V ANCE 1.8 ID = 8 A T 1.6 J = 125°C RESIST 1.4 100 1.2 100°C 1.0 O−SOURCE 0.8 , LEAKAGE (nA) (NORMALIZED) 10 0.6 I DSS , DRAIN−T 0.4 0.2 DS(on)R 0 1 −50 −25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 1 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3
30 30 9 V TJ = 25°C VDS ≥ 10 V TJ = −55°C VGS = 10 V 8 V 25 25 25°C 100°C 7 V (AMPS) (AMPS) 20 20 15 15 6 V 10 10 , DRAIN CURRENT , DRAIN CURRENT I D I D 5 5 V 5 0 0 0 1 2 3 4 5 6 7 8 9 10 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
0.20 0.14 (OHMS) (OHMS) V T GS = 10 V J = 25°C 0.18 T 0.13 ANCE J = 100°C 0.16 ANCE 0.12 0.14 RESIST RESIST 0.12 0.11 25°C VGS = 10 V 0.10 0.10 15 V O−SOURCE 0.08 O−SOURCE 0.09 0.06 − 55°C 0.08 0.04 , DRAIN−T , DRAIN−T 0.02 0.07 DS(on) 0.00 DS(on) R R 0.06 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 30 0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25 27.5 3 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2.0 1000 VGS = 10 V VGS = 0 V ANCE 1.8 ID = 8 A T 1.6 J = 125°C RESIST 1.4 100 1.2 100°C 1.0 O−SOURCE 0.8 , LEAKAGE (nA) (NORMALIZED) 10 0.6 I DSS , DRAIN−T 0.4 0.2 DS(on)R 0 1 −50 −25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 1 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage http://onsemi.com 3