Datasheet IRF530 (On Semiconductor) - 2
| Hersteller | On Semiconductor |
| Beschreibung | TMOS E−FET Power Field Effect. Transistor N−Channel Enhancement−Mode Silicon Gate |
| Seiten / Seite | 7 / 2 — IRF530. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Dateiformat / Größe | PDF / 192 Kb |
| Dokumentensprache | Englisch |
IRF530. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS(1)
Textversion des Dokuments
IRF530 ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 0.25 mAdc) 100 — — Temperature Coefficient (Positive) — 112 — V/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 100 Vdc, VGS = 0 Vdc) — — 10 (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage Cpk ≥ 2.0(3) VGS(th) Vdc (VDS = VGS, ID = 0.25 mA) 2.0 2.9 4.0 Threshold Temperature Coefficient (Negative) — 6.2 — mV/°C Static Drain−to−Source On−Resistance Cpk ≥ 2.0(3) RDS(on) Ohms (VGS = 10 Vdc, ID = 8.0 Adc) — 0.098 0.140 Drain−to−Source On−Voltage VDS(on) Vdc (VGS = 10 Vdc, ID = 14 Adc) — — — (VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C) — — — Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) gFS 4.0 7.4 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 700 800 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss — 200 500 Transfer Capacitance Crss — 65 150
SWITCHING CHARACTERISTICS(2)
Turn−On Delay Time td(on) — 9.0 30 ns Rise Time (V t DS = 36 Vdc, ID = 8.0 Adc, r — 47 75 V Turn−Off Delay Time GS = 10 Vdc, RG = 15 Ω) td(off) — 33 40 Fall Time tf — 34 45 Gate Charge QT — 26 40 nC (V Q DS = 80 Vdc, ID = 14 Adc, 1 — 5.0 — VGS = 10 Vdc) Q2 — 13 — Q3 — 11 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage VSD Vdc (IS = 14 Adc, VGS = 0 Vdc) — 0.92 1.5 (IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.80 — Reverse Recovery Time trr — 103 — nS (I t S = 14 Adc, a — 78 — dIS/dt = 100 A/μS) tb — 25 — Reverse Recovery Stored Charge QRR — 0.46 — mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance Ld nH (Measured from the drain lead 0.25″ from package to center of die) — 3.5 — Internal Source Inductance Ls (Measured from screw on tab to source bond pad) — 7.5 — (1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Cpk + ŤMax limit – TypŤ 3 sigma
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(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 0.25 mAdc) 100 — — Temperature Coefficient (Positive) — 112 — V/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 100 Vdc, VGS = 0 Vdc) — — 10 (VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100 Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS — — 100 nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage Cpk ≥ 2.0(3) VGS(th) Vdc (VDS = VGS, ID = 0.25 mA) 2.0 2.9 4.0 Threshold Temperature Coefficient (Negative) — 6.2 — mV/°C Static Drain−to−Source On−Resistance Cpk ≥ 2.0(3) RDS(on) Ohms (VGS = 10 Vdc, ID = 8.0 Adc) — 0.098 0.140 Drain−to−Source On−Voltage VDS(on) Vdc (VGS = 10 Vdc, ID = 14 Adc) — — — (VGS = 10 Vdc, ID = 8.0 Adc, TJ = 125°C) — — — Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) gFS 4.0 7.4 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 700 800 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss — 200 500 Transfer Capacitance Crss — 65 150
SWITCHING CHARACTERISTICS(2)
Turn−On Delay Time td(on) — 9.0 30 ns Rise Time (V t DS = 36 Vdc, ID = 8.0 Adc, r — 47 75 V Turn−Off Delay Time GS = 10 Vdc, RG = 15 Ω) td(off) — 33 40 Fall Time tf — 34 45 Gate Charge QT — 26 40 nC (V Q DS = 80 Vdc, ID = 14 Adc, 1 — 5.0 — VGS = 10 Vdc) Q2 — 13 — Q3 — 11 —
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage VSD Vdc (IS = 14 Adc, VGS = 0 Vdc) — 0.92 1.5 (IS = 14 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.80 — Reverse Recovery Time trr — 103 — nS (I t S = 14 Adc, a — 78 — dIS/dt = 100 A/μS) tb — 25 — Reverse Recovery Stored Charge QRR — 0.46 — mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance Ld nH (Measured from the drain lead 0.25″ from package to center of die) — 3.5 — Internal Source Inductance Ls (Measured from screw on tab to source bond pad) — 7.5 — (1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Cpk + ŤMax limit – TypŤ 3 sigma
http://onsemi.com 2