Datasheet IRFP140 (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 2 — IRFP140. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
IRFP140. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Notes
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IRFP140
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 19 A b - - 0.077 Ω Forward transconductance gfs VDS = 50 V, ID = 19 A b 9.8 - - S Dynamic Input capacitance Ciss V - 1700 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 550 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 110 - Total gate charge Qg - - 72 I Gate-source charge Qgs V D = 17 A, VDS = 80 V GS = 10 V - - 11 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 32 Turn-on delay time td(on) - 11 - Rise time tr V - 44 - DD = 50 V, ID = 17 A, ns R Turn-off delay time t g = 9.1 Ω, RD = 2.9 Ω, see fig. 10 b d(off) - 53 - Fall time tf - 43 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS MOSFET symbol - - 31 D showing the integral reverse A Pulsed diode forward current a I G SM - - 120 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 31 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 180 360 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.3 2.8 μC Forward turn-on time ton Intrinsic turn-on time is neglegible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0045-Rev. C, 24-Jan-2022
2
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.83
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 19 A b - - 0.077 Ω Forward transconductance gfs VDS = 50 V, ID = 19 A b 9.8 - - S Dynamic Input capacitance Ciss V - 1700 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 550 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 110 - Total gate charge Qg - - 72 I Gate-source charge Qgs V D = 17 A, VDS = 80 V GS = 10 V - - 11 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 32 Turn-on delay time td(on) - 11 - Rise time tr V - 44 - DD = 50 V, ID = 17 A, ns R Turn-off delay time t g = 9.1 Ω, RD = 2.9 Ω, see fig. 10 b d(off) - 53 - Fall time tf - 43 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance L G S - 13 - die contact S Drain-Source Body Diode Characteristics Continuous source-drain diode current IS MOSFET symbol - - 31 D showing the integral reverse A Pulsed diode forward current a I G SM - - 120 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 31 A, VGS = 0 V b - - 2.5 V Body diode reverse recovery time trr - 180 360 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 1.3 2.8 μC Forward turn-on time ton Intrinsic turn-on time is neglegible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0045-Rev. C, 24-Jan-2022
2
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000