Datasheet IRFP140 (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 11 / 1 — IRFP140. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. … |
| Dateiformat / Größe | PDF / 1.3 Mb |
| Dokumentensprache | Englisch |
IRFP140. Power MOSFET. FEATURES. TO-247AC. Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IRFP140
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
TO-247AC
• Repetitive avalanche rated Available • Isolated central mounting hole Available G • 175 °C operating temperature • Fast switching S • Ease of paralleling D S • Simple drive requirements G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note PRODUCT SUMMARY
* This datasheet provides information about parts that are V RoHS-compliant and / or parts that are non RoHS-compliant. For DS (V) 100 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.077 Please see the information / tables in this datasheet for details Qg (max.) (nC) 72
DESCRIPTION
Qgs (nC) 11 Third generation Power MOSFETs from Vishay provide the Qgd (nC) 32 designer with the best combination of fast switching, Configuration Single ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP140PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 T 31 Continuous drain current V C = 25 °C GS at 10 V ID T A C = 100 °C 22 Pulsed drain current a IDM 120 Linear derating factor 1.2 W/°C Single pulse avalanche energy b EAS 100 mJ Repetitive avalanche current a IAR 31 A Repetitive avalanche energy a EAR 18 mJ Maximum power dissipation TC = 25 °C PD 180 W Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) for 10 s 300d 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 156 μH, Rg = 25 Ω, IAS = 31 A (see fig. 12) c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S22-0045-Rev. C, 24-Jan-2022
1
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
FEATURES
• Dynamic dV/dt rating
TO-247AC
• Repetitive avalanche rated Available • Isolated central mounting hole Available G • 175 °C operating temperature • Fast switching S • Ease of paralleling D S • Simple drive requirements G • Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc?99912
Note PRODUCT SUMMARY
* This datasheet provides information about parts that are V RoHS-compliant and / or parts that are non RoHS-compliant. For DS (V) 100 example, parts with lead (Pb) terminations are not RoHS-compliant. RDS(on) (Ω) VGS = 10 V 0.077 Please see the information / tables in this datasheet for details Qg (max.) (nC) 72
DESCRIPTION
Qgs (nC) 11 Third generation Power MOSFETs from Vishay provide the Qgd (nC) 32 designer with the best combination of fast switching, Configuration Single ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC Lead (Pb)-free IRFP140PbF
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 100 V Gate-source voltage VGS ± 20 T 31 Continuous drain current V C = 25 °C GS at 10 V ID T A C = 100 °C 22 Pulsed drain current a IDM 120 Linear derating factor 1.2 W/°C Single pulse avalanche energy b EAS 100 mJ Repetitive avalanche current a IAR 31 A Repetitive avalanche energy a EAR 18 mJ Maximum power dissipation TC = 25 °C PD 180 W Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) for 10 s 300d 10 lbf · in Mounting torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 25 V, starting TJ = 25 °C, L = 156 μH, Rg = 25 Ω, IAS = 31 A (see fig. 12) c. ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C d. 1.6 mm from case S22-0045-Rev. C, 24-Jan-2022
1
Document Number: 91202 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000