Datasheet SUD25N15-52 (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 150-V (D-S) 175 °C MOSFET |
| Seiten / Seite | 8 / 3 — SUD25N15-52. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 172 Kb |
| Dokumentensprache | Englisch |
SUD25N15-52. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. Transconductance
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SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 50 50 VGS = 10 V thru 7 V 6 V 40 40 30 30 rrent (A) u C in ain Current (A) ra 20 20 - Dr - D TC = 125 °C I D I D 25 °C 10 5 V 10 - 55 °C 4 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
60 0.10 50 25 °C T ) 0.08 C = - 55 °C Ω 40 ctance (S) 125 °C 0.06 u VGS = 6 V 30 0.04 V ranscond - On-Resistance ( GS = 10 V 20 - T fs DS(on) g R 0.02 10 0 0.00 0 10 20 30 40 50 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
2500 20 VDS = 75 V 2000 16 ID = 25 A Ciss oltage (V) V 1500 12 1000 8 - Capacitance (pF) C - Gate-to-Source 500 GSV 4 Crss Coss 0 0 0 30 60 90 120 150 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 71768 www.vishay.com S09-1501-Rev. D, 10-Aug-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 50 50 VGS = 10 V thru 7 V 6 V 40 40 30 30 rrent (A) u C in ain Current (A) ra 20 20 - Dr - D TC = 125 °C I D I D 25 °C 10 5 V 10 - 55 °C 4 V 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
60 0.10 50 25 °C T ) 0.08 C = - 55 °C Ω 40 ctance (S) 125 °C 0.06 u VGS = 6 V 30 0.04 V ranscond - On-Resistance ( GS = 10 V 20 - T fs DS(on) g R 0.02 10 0 0.00 0 10 20 30 40 50 0 10 20 30 40 50 ID - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
2500 20 VDS = 75 V 2000 16 ID = 25 A Ciss oltage (V) V 1500 12 1000 8 - Capacitance (pF) C - Gate-to-Source 500 GSV 4 Crss Coss 0 0 0 30 60 90 120 150 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Capacitance Gate Charge
Document Number: 71768 www.vishay.com S09-1501-Rev. D, 10-Aug-09 3