Datasheet SUD25N15-52 (Vishay)

SUD25N15-52
Vishay Siliconix
N-Channel 150-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V) RDS(on) (
Ω
) ID (A)
• 175 °C Junction Temperature 0.052 at VGS = 10 V 25 150 • PWM Optimized 0.060 at VGS = 6 V 23 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS TO-252
• Primary Side Switch D Drain Connected to Tab G D S G Top View
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)- free) S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ± 20 TC = 25 °C 25 Continuous Drain Current (T I J = 175 °C)b D TC = 125 °C 14.5 Pulsed Drain Current IDM 50 A Continuous Source Current (Diode Conduction) IS 25 Avalanche Current IAR 25 Repetitive Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAR 31 mJ TC = 25 °C 136b Maximum Power Dissipation PD W TA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
t ≤ 10 s 15 18 Junction-to-Ambienta RthJA Steady State 40 50 °C/W Junction-to-Case (Drain) RthJC 0.85 1.1 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. Document Number: 71768 www.vishay.com S09-1501-Rev. D, 10-Aug-09 1