Datasheet SUD25N15-52 (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | N-Channel 150-V (D-S) 175 °C MOSFET |
| Seiten / Seite | 8 / 2 — SUD25N15-52. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. … |
| Dateiformat / Größe | PDF / 172 Kb |
| Dokumentensprache | Englisch |
SUD25N15-52. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ.a Max. Unit. Static. Dynamica
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SUD25N15-52
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 150 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 150 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 5 A 0.042 0.052 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145 VGS = 6 V, ID = 5 A 0.047 0.060 Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss 1725 Output Capacitance C V oss GS = 0 V, VDS = 25 V, f = 1 MHz 216 pF Reverse Transfer Capacitance Crss 100 Total Gate Chargec Qg 33 40 Gate-Source Chargec Q V gs DS = 75 V, VGS = 10 V, ID = 25 A 9 nC Gate-Drain Chargec Qgd 12 Gate Resistance Rg 1 3 Ω Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 50 V, RL = 3 Ω 70 100 ns I Turn-Off Delay Timec td(off) D ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω 25 40 Fall Timec tf 60 90
Source-Drain Diode Ratings and Characteristics
TC = 25 °C Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 25 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 25 A, dI/dt = 100 A/µs 95 140 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71768 2 S09-1501-Rev. D, 10-Aug-09
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 150 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2 4 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 150 V, VGS = 0 V 1 Zero Gate Voltage Drain Current IDSS VDS = 150 V, VGS = 0 V, TJ = 125 °C 50 µA VDS = 150 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 50 A VGS = 10 V, ID = 5 A 0.042 0.052 VGS = 10 V, ID = 5 A, TJ = 125 °C 0.109 Drain-Source On-State Resistanceb RDS(on) Ω VGS = 10 V, ID = 5 A, TJ = 175 °C 0.145 VGS = 6 V, ID = 5 A 0.047 0.060 Forward Transconductanceb gfs VDS = 15 V, ID = 25 A 40 S
Dynamica
Input Capacitance Ciss 1725 Output Capacitance C V oss GS = 0 V, VDS = 25 V, f = 1 MHz 216 pF Reverse Transfer Capacitance Crss 100 Total Gate Chargec Qg 33 40 Gate-Source Chargec Q V gs DS = 75 V, VGS = 10 V, ID = 25 A 9 nC Gate-Drain Chargec Qgd 12 Gate Resistance Rg 1 3 Ω Turn-On Delay Timec td(on) 15 25 Rise Timec tr VDD = 50 V, RL = 3 Ω 70 100 ns I Turn-Off Delay Timec td(off) D ≅ 25 A, VGEN = 10 V, Rg = 2.5 Ω 25 40 Fall Timec tf 60 90
Source-Drain Diode Ratings and Characteristics
TC = 25 °C Pulsed Current ISM 50 A Diode Forward Voltageb VSD IF = 25 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF = 25 A, dI/dt = 100 A/µs 95 140 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71768 2 S09-1501-Rev. D, 10-Aug-09