Datasheet SUD25N15-52 (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | N-Channel 150-V (D-S) 175 °C MOSFET |
| Seiten / Seite | 8 / 4 — SUD25N15-52. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| Dateiformat / Größe | PDF / 172 Kb |
| Dokumentensprache | Englisch |
SUD25N15-52. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source-Drain Diode Forward Voltage
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SUD25N15-52
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 5 A 2.5 2.0 rrent (A) u TJ = 150 °C 1.5 10 rce C - On-Resistance ormalized) u o (N (on) 1.0 - S DS I S TJ = 25 °C R 0.5 0.0 1 - 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 T V J - Junction Temperature (°C) SD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS
30 100 10 µs 25 Limited by RDS(on)* 100 µs 20 10 rrent (A) rrent (A) u u 15 1 ms 10 ms - Drain C - Drain C 10 1 I D I D 100 ms T 1 s, DC C = 25 °C 5 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0 1 . 1 10 100 0 1 0 0 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
* VGS > minimum VGS at which RDS(on) is specified
vs. Case Temperature Safe Operating Area
2 1 Duty Cycle = 0.5 ransient 0.2 e T 0.1 fectiv 0.1 mal Impedance ed Ef Ther 0.02 maliz 0.05 Nor Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71768. www.vishay.com Document Number: 71768 4 S09-1501-Rev. D, 10-Aug-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 5 A 2.5 2.0 rrent (A) u TJ = 150 °C 1.5 10 rce C - On-Resistance ormalized) u o (N (on) 1.0 - S DS I S TJ = 25 °C R 0.5 0.0 1 - 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 T V J - Junction Temperature (°C) SD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage THERMAL RATINGS
30 100 10 µs 25 Limited by RDS(on)* 100 µs 20 10 rrent (A) rrent (A) u u 15 1 ms 10 ms - Drain C - Drain C 10 1 I D I D 100 ms T 1 s, DC C = 25 °C 5 Single Pulse 0 0.1 0 25 50 75 100 125 150 175 0 1 . 1 10 100 0 1 0 0 TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
Maximum Avalanche Drain Current
* VGS > minimum VGS at which RDS(on) is specified
vs. Case Temperature Safe Operating Area
2 1 Duty Cycle = 0.5 ransient 0.2 e T 0.1 fectiv 0.1 mal Impedance ed Ef Ther 0.02 maliz 0.05 Nor Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71768. www.vishay.com Document Number: 71768 4 S09-1501-Rev. D, 10-Aug-09