Datasheet BUZ 171 (STMicroelectronics) - 8
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 8 — BUZ 171. Avalanche energy. Drain-source breakdown voltage |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Avalanche energy. Drain-source breakdown voltage
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Textversion des Dokuments
BUZ 171 Avalanche energy
E = ƒ(T )
Drain-source breakdown voltage
AS j parameter: ID = -8 A, VDD = -25 V V(BR)DSS = ƒ(Tj) R = 25 Ω, L = 1.1 mH GS 75 -60 mJ V E 60 V -57 AS (BR)DSS 55 -56 50 -55 45 -54 40 -53 35 -52 30 -51 25 -50 20 -49 15 -48 10 -47 5 -46 0 -45 20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160 T T j j Semiconductor Group 8 07/96
E = ƒ(T )
Drain-source breakdown voltage
AS j parameter: ID = -8 A, VDD = -25 V V(BR)DSS = ƒ(Tj) R = 25 Ω, L = 1.1 mH GS 75 -60 mJ V E 60 V -57 AS (BR)DSS 55 -56 50 -55 45 -54 40 -53 35 -52 30 -51 25 -50 20 -49 15 -48 10 -47 5 -46 0 -45 20 40 60 80 100 120 °C 160 -60 -20 20 60 100 °C 160 T T j j Semiconductor Group 8 07/96