Datasheet BUZ 171 (STMicroelectronics) - 2
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 2 — BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. min. typ. max. Static Characteristics
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BUZ 171 Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Static Characteristics
Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C -50 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA -2.1 -3 -4 Zero gate voltage drain current IDSS µA VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS nA VGS = -20 V, VDS = 0 V - -10 -100 Drain-Source on-resistance RDS(on) Ω VGS = -10 V, ID = -5 A - 0.25 0.3 Semiconductor Group 2 07/96
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Static Characteristics
Drain- source breakdown voltage V(BR)DSS V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C -50 - - Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA -2.1 -3 -4 Zero gate voltage drain current IDSS µA VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 °C - -10 -100 Gate-source leakage current IGSS nA VGS = -20 V, VDS = 0 V - -10 -100 Drain-Source on-resistance RDS(on) Ω VGS = -10 V, ID = -5 A - 0.25 0.3 Semiconductor Group 2 07/96