Datasheet BUZ 171 (STMicroelectronics) - 7
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 7 — BUZ 171. Drain-source on-resistance. Gate threshold voltage. Typ. … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Drain-source on-resistance. Gate threshold voltage. Typ. capacitances. Forward characteristics of reverse diode
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BUZ 171 Drain-source on-resistance Gate threshold voltage
RDS (on) = ƒ(Tj) VGS (th) = ƒ(Tj) parameter: I = -5 A, V = -10 V parameter: V = V , I = 1 mA D GS GS DS D 0.70 -4.6 Ω V 98% 0.60 -4.0 R 0.55 V DS (on) GS(th) -3.6 0.50 -3.2 typ 0.45 -2.8 0.40 98% -2.4 0.35 2% typ 0.30 -2.0 0.25 -1.6 0.20 -1.2 0.15 -0.8 0.10 0.05 -0.4 0.00 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160 T T j j
Typ. capacitances Forward characteristics of reverse diode
C = f (VDS) IF = ƒ(VSD) parameter:VGS = 0V, f = 1MHz parameter: T , t = 80 µs j p 4 10 2 -10 pF A C IF 3 10 1 -10 Ciss Coss 2 10 0 C -10 rss T = 25 °C typ j T = 150 °C typ j T = 25 °C (98%) j T = 150 °C (98%) j 1 10 -1 -10 0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD 7 07/96 Semiconductor Group
RDS (on) = ƒ(Tj) VGS (th) = ƒ(Tj) parameter: I = -5 A, V = -10 V parameter: V = V , I = 1 mA D GS GS DS D 0.70 -4.6 Ω V 98% 0.60 -4.0 R 0.55 V DS (on) GS(th) -3.6 0.50 -3.2 typ 0.45 -2.8 0.40 98% -2.4 0.35 2% typ 0.30 -2.0 0.25 -1.6 0.20 -1.2 0.15 -0.8 0.10 0.05 -0.4 0.00 0.0 -60 -20 20 60 100 °C 160 -60 -20 20 60 100 °C 160 T T j j
Typ. capacitances Forward characteristics of reverse diode
C = f (VDS) IF = ƒ(VSD) parameter:VGS = 0V, f = 1MHz parameter: T , t = 80 µs j p 4 10 2 -10 pF A C IF 3 10 1 -10 Ciss Coss 2 10 0 C -10 rss T = 25 °C typ j T = 150 °C typ j T = 25 °C (98%) j T = 150 °C (98%) j 1 10 -1 -10 0 -5 -10 -15 -20 -25 -30 V -40 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VDS VSD 7 07/96 Semiconductor Group