Datasheet BUZ 171 (STMicroelectronics) - 3
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 3 — BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. min. typ. max. Dynamic Characteristics
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BUZ 171 Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics
Transconductance gfs S V ≥ DS 2 * ID * RDS(on)max, ID = -5 A 1.5 2.3 - Input capacitance Ciss pF VGS = 0 V, VDS = -25 V, f = 1 MHz - 750 1000 Output capacitance Coss VGS = 0 V, VDS = -25 V, f = 1 MHz - 270 400 Reverse transfer capacitance Crss VGS = 0 V, VDS = -25 V, f = 1 MHz - 120 180 Turn-on delay time td(on) ns VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 20 30 Rise time tr VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 110 170 Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 70 90 Fall time tf VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 100 140 Semiconductor Group 3 07/96
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics
Transconductance gfs S V ≥ DS 2 * ID * RDS(on)max, ID = -5 A 1.5 2.3 - Input capacitance Ciss pF VGS = 0 V, VDS = -25 V, f = 1 MHz - 750 1000 Output capacitance Coss VGS = 0 V, VDS = -25 V, f = 1 MHz - 270 400 Reverse transfer capacitance Crss VGS = 0 V, VDS = -25 V, f = 1 MHz - 120 180 Turn-on delay time td(on) ns VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 20 30 Rise time tr VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 110 170 Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 70 90 Fall time tf VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Ω - 100 140 Semiconductor Group 3 07/96