Datasheet BUZ 171 (STMicroelectronics) - 4
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 4 — BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Electrical Characteristics,. Parameter. Symbol. Values. Unit. min. typ. max. Reverse Diode
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BUZ 171 Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Reverse Diode
Inverse diode continuous forward current IS A TC = 25 °C - - -8 Inverse diode direct current,pulsed ISM TC = 25 °C - - -32 Inverse diode forward voltage VSD V VGS = 0 V, IF = -16 A - -1.25 -1.7 Reverse recovery time trr ns VR = -30 V, IF=lS, diF/dt = 100 A/µs - 90 - Reverse recovery charge Qrr µC VR = -30 V, IF=lS, diF/dt = 100 A/µs - 0.23 - Semiconductor Group 4 07/96
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. Reverse Diode
Inverse diode continuous forward current IS A TC = 25 °C - - -8 Inverse diode direct current,pulsed ISM TC = 25 °C - - -32 Inverse diode forward voltage VSD V VGS = 0 V, IF = -16 A - -1.25 -1.7 Reverse recovery time trr ns VR = -30 V, IF=lS, diF/dt = 100 A/µs - 90 - Reverse recovery charge Qrr µC VR = -30 V, IF=lS, diF/dt = 100 A/µs - 0.23 - Semiconductor Group 4 07/96