Datasheet BUZ 171 (STMicroelectronics) - 5
| Hersteller | STMicroelectronics |
| Beschreibung | SIPMOS Power Transistor |
| Seiten / Seite | 9 / 5 — BUZ 171. Power dissipation. Drain current. Safe operating area. Transient … |
| Dateiformat / Größe | PDF / 195 Kb |
| Dokumentensprache | Englisch |
BUZ 171. Power dissipation. Drain current. Safe operating area. Transient thermal impedance
Modelllinie für dieses Datenblatt
Textversion des Dokuments
BUZ 171 Power dissipation Drain current
Ptot = ƒ(TC) ID = ƒ(TC) parameter: V ≥ -10 V GS 45 -9 W A P I tot 35 D -7 30 -6 25 -5 20 -4 15 -3 10 -2 5 -1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 T T C C
Safe operating area Transient thermal impedance
I = ƒ(V ) Z = ƒ(t ) D DS th JC p parameter: D = 0.01, T = 25°C parameter: D = t / T C p 2 -10 1 10 K/W t = 90.0µs A p 100 µs I Z D I thJC 0 10 / D 1 -10 V DS 1 ms = R DS(on) -1 10 10 ms D = 0.50 0.20 0 -10 0.10 DC 0.05 -2 10 0.02 0.01 single pulse -1 -10 -3 10 0 1 2 -7 -6 -5 -4 -3 -2 -1 0 -10 -10 V -10 10 10 10 10 10 10 10 s 10 V t DS p 5 07/96 Semiconductor Group
Ptot = ƒ(TC) ID = ƒ(TC) parameter: V ≥ -10 V GS 45 -9 W A P I tot 35 D -7 30 -6 25 -5 20 -4 15 -3 10 -2 5 -1 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 T T C C
Safe operating area Transient thermal impedance
I = ƒ(V ) Z = ƒ(t ) D DS th JC p parameter: D = 0.01, T = 25°C parameter: D = t / T C p 2 -10 1 10 K/W t = 90.0µs A p 100 µs I Z D I thJC 0 10 / D 1 -10 V DS 1 ms = R DS(on) -1 10 10 ms D = 0.50 0.20 0 -10 0.10 DC 0.05 -2 10 0.02 0.01 single pulse -1 -10 -3 10 0 1 2 -7 -6 -5 -4 -3 -2 -1 0 -10 -10 V -10 10 10 10 10 10 10 10 s 10 V t DS p 5 07/96 Semiconductor Group