Datasheet 2N7000 (Microchip) - 3
| Hersteller | Microchip |
| Beschreibung | N-Channel Enhancement-Mode Vertical DMOS FET |
| Seiten / Seite | 5 / 3 — 2N7000. Typical Performance Curves. Output Characteristics. Saturation … |
| Revision | 09-10-2008 |
| Dateiformat / Größe | PDF / 645 Kb |
| Dokumentensprache | Englisch |
2N7000. Typical Performance Curves. Output Characteristics. Saturation Characteristics. Transconductance vs. Drain Current
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2N7000 Typical Performance Curves Output Characteristics Saturation Characteristics
2.5 2.5 V = 10V GS 8V V = 10V GS 2.0 2.0 8V 1.5 1.5 6V 6V (amperes) (amperes) 1.0 I D I D 1.0 4V 4V 0.5 0.5 0 0 10 20 30 40 50 0 0 2 4 6 8 10 V (volts) V (volts) DS DS
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature
1.0 2.0 V = 25V DS 0.8 ) 0.6 TO-92 1.0 T = -55OC A (seimens (watts) 0.4 25OC P D G FS 125OC 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 I (amperes) D T (OC) C
Maximum Rated Safe Operating Area Thermal Response Characteristics
1.0 1.0 TO-92 (pulsed) 0.8 TO-92 (DC) 0.1 0.6 (amperes) 0.4 I D 0.01 TO-92 0.2 P = 1.0W D Thermal Resistance (normalized) T = 25OC C T = 25OC C 0.001 0 0.1 1.0 10 100 0.001 0.01 0.1 1.0 10 V (volts) DS t (seconds) p Doc.# DSFP-2N7000
Supertex inc.
C0628213 3
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2.5 2.5 V = 10V GS 8V V = 10V GS 2.0 2.0 8V 1.5 1.5 6V 6V (amperes) (amperes) 1.0 I D I D 1.0 4V 4V 0.5 0.5 0 0 10 20 30 40 50 0 0 2 4 6 8 10 V (volts) V (volts) DS DS
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature
1.0 2.0 V = 25V DS 0.8 ) 0.6 TO-92 1.0 T = -55OC A (seimens (watts) 0.4 25OC P D G FS 125OC 0.2 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 75 100 125 150 I (amperes) D T (OC) C
Maximum Rated Safe Operating Area Thermal Response Characteristics
1.0 1.0 TO-92 (pulsed) 0.8 TO-92 (DC) 0.1 0.6 (amperes) 0.4 I D 0.01 TO-92 0.2 P = 1.0W D Thermal Resistance (normalized) T = 25OC C T = 25OC C 0.001 0 0.1 1.0 10 100 0.001 0.01 0.1 1.0 10 V (volts) DS t (seconds) p Doc.# DSFP-2N7000
Supertex inc.
C0628213 3
www.supertex.com