Datasheet 2N7000 (Microchip) - 4

2N7000 Typical Performance Curves (cont.) BV Variation with Temperature DSS On-Resistance vs. Drain Current
5.0 1.1 V = 4.5V GS 4.0 ) V = 10V GS 3.0 1.0 (ohms) (normalized 2.0 DSS R DSS(ON BV 1.0 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 T (OC) I (amperes) D J
V and R Variation with Temperature Transfer Characteristics (th) DS
2.5 1.6 1.9 V = 25V DS 2.0 1.4 T = -55OC 1.6 A R @ 10V, 1.0A DS 25OC ) 1.5 1.2 1.3 V @ 1.0mA 125OC (th) (amperes (normalized (normalized 1.0 1.0 1.0 I D V GS(th) R DS(ON) 0.5 0.8 0.7 0 0.6 0.4 0 2 4 6 8 10 -50 0 50 100 150 VGS (volts) T (OC) j
Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics
100 10 f = 1MHz 8 75 V = 10V DS 40V ) 6 50 (volts 80 pF V GS 4 CISS C (picofarads 25 2 COSS CRSS 40 pF 0 0 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1.0 V (volts) DS Q (nanocoulombs) G Doc.# DSFP-2N7000
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