Datasheet 2N7000 (Microchip) - 2

2N7000 Thermal Characteristics Package I I Power Dissipation D D I † I (continuous)
†
(pulsed) @T = 25OC DR DRM C
TO-92 200mA 500mA 1.0W 200mA 500mA
Notes:
† I (continuous) is limited by max rated T. D j
Electrical Characteristics
(T = 25°C unless otherwise specified) A
Sym Parameter Min Typ Max Units Conditions
BV Drain-to-Source breakdown voltage 60 - - V V = 0V, I = 10µA DSS GS D V Gate threshold voltage 0.8 - 3.0 V V = V , I = 1.0mA GS(th) GS DS D I Gate body leakage current - - 10 nA V = ±15V, V = 0V GSS GS DS - - 1.0 µA V = 0V, V = 48V GS DS I Zero Gate voltage drain current DSS - - 1.0 mA V = 0V, V = 48V, GS DS T = 125OC A I On-state drain current 75 - - mA V = 4.5V, V = 10V D(ON) GS DS - - 5.3 V = 4.5V, I = 75mA R Static Drain-to-Source Ω GS D DS(ON) on-state resistance - - 5.0 V = 10V, I = 500mA GS D G Forward transconductance 100 - - mmho V = 10V, I = 200mA FS DS D C Input capacitance - - 60 ISS C Common Source output capacitance - - 25 pF V = 0V, V = 25V, GS DS OSS f = 1.0MHz C Reverse transfer capacitance - - 5 RSS t Turn-on time - - 10 (ON) ns V = 15V, I = 500mA, DD D R = 25Ω t Turn-off time - - 10 GEN (OFF) V Diode forward voltage drop - 0.85 - V V = 0V, I = 200mA SD GS SD
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit 10V
90%
VDD INPUT Pulse
R 10%
Generator
L
0V OUTPUT
t t (ON) (OFF) RGEN t t t t d(ON) r d(OFF) f
VDD INPUT
10% 10%
D.U.T. OUTPUT 0V
90% 90% Doc.# DSFP-2N7000
Supertex inc.
C0628213 2
www.supertex.com