Datasheets - MOSFET-Einzeltransistoren Diodes - 6
Unterabschnitt: "MOSFET-Einzeltransistoren"
Hersteller: "Diodes"
Hersteller
Advanced Linear Devices Alpha & Omega Ampleon APT Avago Technologies Central Semiconductor Clare Cree Diodes Efficient Power Conversion Eudyna Devices Fairchild Freescale Fuji Electric HALO Inchange Semiconductor Infineon Integra Technologies International Rectifier International Wire Intersil IXYS IXYS RF JiLin Sino-Microelectronics Littelfuse MCC Microchip Microsemi Motorola Multicomp National Semiconductor New Jersey Semiconductor Nexperia Niko Semiconductor NTE Electronics NXP ON Semiconductor Panasonic Philips Renesas Rohm Sanyo Semelab Semikron Siliconix STMicroelectronics Taiwan Semiconductor Temic Texas Instruments Toshiba Vishay Wayon WolfspeedSerie
BSS84 DMN2990UFZ DMN3012LEG DMN31D5UFZ DMP2160UWQ DMP32D9UFZ DMT10H015LPS DMT47M2LDVQ VN10LP ZVN2106A ZVN2110A ZVN3306A ZVN3306F ZVN4210G ZVP2106A ZVP3306A ZXGD3113W6 ZXM61N02F ZXMP6A17DN8 ZXMP6A17E6 ZXMP6A17E6Q ZXMP6A17GQ ZXMP6A17K ZXMP6A17N8Suchergebnisse: 185 Ausgabe: 101-120
Aussicht: Aufführen / Bilder
Part Number: ZXMN2B01F Manufacturer: Diodes Description: MOSFET, N, SOT-23 Download Data Sheet Docket: ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( ) 0.100 @ VGS= 4.5V 20 0.150 @ ...- Part Number: ZXMN2A01FTA Manufacturer: Diodes Description: MOSFET, N, SOT-23 Download Data Sheet Docket: ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION Simulation Model Specifications: ...
Part Number: ZXMN10A25KTC Manufacturer: Diodes Description: MOSFET, N, 100 V, D-PAK Download Data Sheet Docket: ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS 100 RDS(on) (V) 0.125 @ VGS= 10V 0.150 @ VGS= 6V ID (A) 6.4 5.8 ...
Part Number: ZXMN10A11G Manufacturer: Diodes Description: MOSFET, N, SOT-223 Download Data Sheet Docket: ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V; RDS(ON)= 0.35 DESCRIPTION ID= 2.4A This new generation of TRENCH ...
Part Number: ZXMN10A08E6 Manufacturer: Diodes Description: MOSFET, N, SOT-23-6 Simulation Model Specifications: Continuous Drain Current Id: 1.5 A Current Id Max: 1.9 A Current Temperature: 25°C Drain Source Voltage Vds: 100 V Junction Temperature ...- Part Number: ZXMN10A07F Manufacturer: Diodes Description: MOSFET, N, SOT-23 Download Data Sheet Docket: ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 100V : RDS(on)= 0.7 DESCRIPTION ID= 0.8A This new generation of Trench ...
- Part Number: ZXMN0545G4 Manufacturer: Diodes Description: MOSFET, N, SOT-223 Download Data Sheet Docket: ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 450V; RDS(ON) = 50 ; ID = 140mA DESCRIPTION This 450V enhancement mode ...
Part Number: ZXM64P03X Manufacturer: Diodes Description: MOSFET, P, MSOP-8 Download Data Sheet Docket: ZXM64P03X 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.075 DESCRIPTION ID=-3.8A This new generation of high density ...- Part Number: ZXM64N02X Manufacturer: Diodes Description: MOSFET, N, MSOP-8 Download Data Sheet Docket: ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040; ID=5.4A DESCRIPTION This new generation of high density ...
- Part Number: ZXM62P03E6 Manufacturer: Diodes Description: MOSFET, P, SOT-23-6 Download Data Sheet Docket: ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 DESCRIPTION This new generation of high density MOSFETs ...
- Part Number: ZXM62P02E6 Manufacturer: Diodes Description: MOSFET, P, SOT-23-6 Download Data Sheet Docket: ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A DESCRIPTION This new generation of high ...
- Part Number: ZXM61P03FTA Manufacturer: Diodes Description: MOSFET, P SOT-23 REEL 3K Download Data Sheet Docket: ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high ...
- Part Number: ZXM61P03F Manufacturer: Diodes Description: MOSFET, P, SOT-23 Download Data Sheet Docket: ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION This new generation of high density ...
- Part Number: ZXM61P02FTA Manufacturer: Diodes Description: MOSFET, P SOT-23 REEL 3K Download Data Sheet Docket: ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A DESCRIPTION This new generation of high ...
- Part Number: ZXM61P02F Manufacturer: Diodes Description: MOSFET, P, SOT-23 Download Data Sheet Docket: ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A DESCRIPTION This new generation of high density ...
- Part Number: ZXM61N03F Manufacturer: Diodes Description: MOSFET, N, SOT-23 Download Data Sheet Docket: ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.22 ; ID=1.4A DESCRIPTION This new generation of high density ...
- Part Number: ZVP4424G Manufacturer: Diodes Description: MOSFET, P, SOT-223 Download Data Sheet Docket: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8 typical at VGS=-3.5V * Low ...
Part Number: ZVP4424A Manufacturer: Diodes Description: MOSFET, P, LOGIC, E-LINE Download Data Sheet Docket: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 SEPTEMBER 94 FEATURES * 240 Volt VDS * RDS(on)=9 * Low threshold APPLICATIONS * ...- Part Number: ZVP4105A Manufacturer: Diodes Description: MOSFET, P, E-LINE Download Data Sheet Docket: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 50 Volt VDS * RDS(on)=10 * Low threshold ZVP4105A D G S Simulation Model ...
- Part Number: ZVP3310F Manufacturer: Diodes Description: MOSFET, P, SOT-23 Download Data Sheet Docket: SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20 COMPLEMENTARY TYPE PARTMARKING DETAIL ...
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