Datasheet BSC067N06LS3 G - 6
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 6 — BSC067N06LS3 G. 9 Drain-source on-state resistance. 10 Typ. gate … |
| Dateiformat / Größe | PDF / 467 Kb |
| Dokumentensprache | Englisch |
BSC067N06LS3 G. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 2.5. 1.5. [V]. 0.5. -60. -20. 100. 140. 180. [°C]
Textversion des Dokuments
BSC067N06LS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=100 µA
12 2.5 11 10 2 9
350 mA
8 ]
max W
7
35 µA
1.5 [m [V] ) ) n 6 h o t ( (
typ
DS GS 5 R V 1 4 3 0.5 2 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 1000
Ciss Coss
103
150 °C, max
100 ] ]
150 °C 25 °C
102 [pF [A C I F
Crss
10 101
25 °C, max
1 0 20 40 60 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD
Rev. 2.4 page 6 2013-09-18
R DS(on)=f(T j); I D=50 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=100 µA
12 2.5 11 10 2 9
350 mA
8 ]
max W
7
35 µA
1.5 [m [V] ) ) n 6 h o t ( (
typ
DS GS 5 R V 1 4 3 0.5 2 1 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T [°C] T [°C] j j 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j
104 1000
Ciss Coss
103
150 °C, max
100 ] ]
150 °C 25 °C
102 [pF [A C I F
Crss
10 101
25 °C, max
1 0 20 40 60 0.0 0.5 1.0 1.5 2.0 V [V] V [V] DS SD
Rev. 2.4 page 6 2013-09-18