Datasheet BSC067N06LS3 G - 7
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 7 — BSC067N06LS3 G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. … |
| Dateiformat / Größe | PDF / 467 Kb |
| Dokumentensprache | Englisch |
BSC067N06LS3 G. 13 Avalanche characteristics. 14 Typ. gate charge. 100. [V]. GSV. 0.1. 1000. [µs]. [nC]. gate
Textversion des Dokuments
BSC067N06LS3 G 13 Avalanche characteristics 14 Typ. gate charge
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V 125 °C 100 °C 25 °C
8 ] [A 10 [V] 6 I AV GSV 4 2 1 0 0.1 1 10 100 1000 0 10 20 30 40 50 60 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
60 [V] )S DS( BRV
V gs(th)
50
Q g(th) Q sw
Q gate
Q Q
40
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev. 2.4 page 7 2013-09-18
I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=50 A pulsed parameter: T j(start) parameter: V DD
100 12
30 V
10
12 V 48 V 125 °C 100 °C 25 °C
8 ] [A 10 [V] 6 I AV GSV 4 2 1 0 0.1 1 10 100 1000 0 10 20 30 40 50 60 t [µs] Q [nC] AV gate 15 Drain-source breakdown voltage 16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
70 V
GS Q g
60 [V] )S DS( BRV
V gs(th)
50
Q g(th) Q sw
Q gate
Q Q
40
gs gd
-60 -20 20 60 100 140 180 T [°C] j
Rev. 2.4 page 7 2013-09-18