Datasheet BSC067N06LS3 G - 5
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 5 — BSC067N06LS3 G. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| Dateiformat / Größe | PDF / 467 Kb |
| Dokumentensprache | Englisch |
BSC067N06LS3 G. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 200. 180. 160. 140. 120. 100. [V]. [A]
Textversion des Dokuments
BSC067N06LS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
200 20
3 V 3.2 V 3.5 V 4 V 4.5 V 10 V 5 V
180 18 160 16 140
4.5 V
14 ] 120 12
W
] [m A [ 100 ) 10 n
5 V
o I D (
4 V
DS 80 R 8
6 V
60 6
10 V 3.5 V
40 4
3.2 V
20 2
3 V 2.8 V
0 0 0 1 2 3 0 40 80 120 160 200 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
100 150 80 100 60 ] [A [S] I D fsg 40 50 20
150 °C 25 °C
0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D
Rev. 2.4 page 5 2013-09-18
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
200 20
3 V 3.2 V 3.5 V 4 V 4.5 V 10 V 5 V
180 18 160 16 140
4.5 V
14 ] 120 12
W
] [m A [ 100 ) 10 n
5 V
o I D (
4 V
DS 80 R 8
6 V
60 6
10 V 3.5 V
40 4
3.2 V
20 2
3 V 2.8 V
0 0 0 1 2 3 0 40 80 120 160 200 V [V] I [A] DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j
100 150 80 100 60 ] [A [S] I D fsg 40 50 20
150 °C 25 °C
0 0 0 1 2 3 4 5 0 40 80 120 160 V [V] I [A] GS D
Rev. 2.4 page 5 2013-09-18