Datasheet BSC067N06LS3 G - 2

BSC067N06LS3 G Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Power dissipation P tot T C=25 °C 69 W T A=25 °C, 2.5 R thJA=50 K/W2) Operating and storage temperature T j, T stg -55 ... 150 °C IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, junction - case R thJC - - 1.8 K/W Device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area2) - - 50
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=35 µA 1.2 1.7 2.2 V DS=60 V, V GS=0 V, Zero gate voltage drain current I DSS - 0.1 1 µA T j=25 °C V DS=60 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=25 A - 8.0 12.1 mW V GS=10 V, I D=50 A - 5.4 6.7 Gate resistance R G - 1.3 - W |V DS|>2|I D|R DS(on)max, Transconductance g fs 38 77 - S I D=50 A Rev. 2.4 page 2 2013-09-18