Datasheet BSC067N06LS3 G - 4
| Beschreibung | OptiMOS 3 Power-Transistor |
| Seiten / Seite | 10 / 4 — BSC067N06LS3 G. 1 Power dissipation. 2 Drain current. [W 40. otP. 100. … |
| Dateiformat / Größe | PDF / 467 Kb |
| Dokumentensprache | Englisch |
BSC067N06LS3 G. 1 Power dissipation. 2 Drain current. [W 40. otP. 100. 150. 200. [°C]. 3 Safe operating area
Textversion des Dokuments
BSC067N06LS3 G 1 Power dissipation 2 Drain current
P ≥10 V tot=f(T C) I D=f(T C); V GS
80 60 70 50 60 40 50 ] ] [W 40 t [A 30 otP I D 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state 1 µs resistance
102
10 µs
100
100 µs 0.5
]
1 ms
] W/ [A
0.2
101 K [
10 ms
I D C hJt
DC
Z
0.1
10-1
0.05
100
0.02 0.01 single pulse
10-1 10-2 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev. 2.4 page 4 2013-09-18
P ≥10 V tot=f(T C) I D=f(T C); V GS
80 60 70 50 60 40 50 ] ] [W 40 t [A 30 otP I D 30 20 20 10 10 0 0 0 50 100 150 200 0 50 100 150 200 T [°C] T [°C] C C 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T
103 101
limited by on-state 1 µs resistance
102
10 µs
100
100 µs 0.5
]
1 ms
] W/ [A
0.2
101 K [
10 ms
I D C hJt
DC
Z
0.1
10-1
0.05
100
0.02 0.01 single pulse
10-1 10-2 10-1 100 101 102 10-6 10-5 10-4 10-3 10-2 10-1 100 V [V] t [s] DS p
Rev. 2.4 page 4 2013-09-18