Datasheet SI2302DS (Nexperia) - 10
Hersteller | Nexperia |
Beschreibung | N-Channel Enhancement Mode Field-Effect Transistor |
Seiten / Seite | 13 / 10 — Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect … |
Dateiformat / Größe | PDF / 366 Kb |
Dokumentensprache | Englisch |
Philips Semiconductors. SI2302DS. N-channel enhancement mode field-effect transistor. Package outline
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Philips Semiconductors SI2302DS N-channel enhancement mode field-effect transistor 9. Package outline Plastic surface mounted package; 3 leads SOT23
D B E A X HE v M A
3
Q A A1
1 2
c e1 bp w M B Lp e detail X 0 1 2 mm scale
DIMENSIONS (mm are the original dimensions) A1 UNIT A b e v max. p c D E e1 HE Lp Q w
1.1 0.48 0.15 3.0 1.4 2.5 0.45 0.55 mm 0.1 1.9 0.95 0.2 0.1 0.9 0.38 0.09 2.8 1.2 2.1 0.15 0.45
REFERENCES OUTLINE EUROPEAN ISSUE DATE VERSION PROJECTION IEC JEDEC EIAJ
97-02-28 SOT23 TO-236AB 99-09-13
Fig 14. SOT23.
9397 750 09107 © Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data Rev. 02 — 20 November 2001 9 of 12
Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers