SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 — 20 November 2001Product data M3D088 1.Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: SI2302DS in SOT23. 2.Features ■ TrenchMOS™ technology ■ Very fast switching ■ Logic level compatible ■ Subminiature surface mount package. 3.Applications ■ Battery management ■ High speed switch ■ Low power DC to DC converter. 4.Pinning informationTable 1:Pinning - SOT23, simplified outline and symbolPinDescriptionSimplified outlineSymbol 1 gate (g) 3 2 source (s) d 3 drain (d) g 12 MBB076 s Top view MSB003 SOT23 1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V. Document Outline 1. Description 2. Features 3. Applications 4. Pinning information 5. Quick reference data 6. Limiting values 7. Thermal characteristics 7.1 Transient thermal impedance 8. Characteristics 9. Package outline 10. Revision history 11. Data sheet status 12. Definitions 13. Disclaimers