Datasheet MMBT2369, PN2369 (ON Semiconductor) - 3

Symbol Ta = 25°C unless otherwise noted Parameter Test Condition Min. Max. Units Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 15 V V(BR)CES Collector-Emitter Breakdown Voltage IC = 10μA, VBE = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10μA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10μA, IC = 0 4.5 ICBO Collector Cutoff Current VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 125°C V
0.4
30 μA
μA On Characteristics
hFE DC Current Gain * IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage * IC = 10mA, IB = 1.0mA VBE(sat) Base-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA 40
20 0.7 120
0.25 V 0.85 V 4.0 pF 5.0 pF Small Signal Characteristics
Cobo Output Capacitance VCB = 5.0V, IE = 0, f = 1.0MHz Cibo Input Capacitance VEB = 0.5V, IC = 0, f = 1.0MHz hfe Small -Signal Current Gain IC = 10mA, VCE = 10V, RG = 2.0kΩ,
f = 100MHz 5.0 Switching Characteristics
ts Storage Time IB1 = IB2 = IC = 10mA 13 ns ton Turn-On Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA 12 ns toff Turn-Off Time VCC = 3.0V, IC = 10mA, IB1 = 3.0mA,
IB2 = 1.5mA 18 ns * Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0% © 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com
2 MMBT2369 / PN2369 — NPN Switching Transistor Electrical Characteristics