Datasheet MMBT2369, PN2369 (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | NPN Switching Transistor |
| Seiten / Seite | 7 / 2 — MMBT2369 / PN2369. NPN Switching Transistor. • This device is designed … |
| Dateiformat / Größe | PDF / 212 Kb |
| Dokumentensprache | Englisch |
MMBT2369 / PN2369. NPN Switching Transistor. • This device is designed for high speed saturated switching at
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MMBT2369 / PN2369
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92
1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1. Emitter 2. Base 3. Collector = 25×C unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current ICP **Collector Current (Pulse) TJ, TSTG Operating and Storage Junction Temperature Range -Continuous 4.5 V 200 mA 400 mA -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Max. Units PD Symbol
Total Device Dissipation
Derate above 25°C Parameter 350
2.8 mW
mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”. © 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com
1 MMBT2369 / PN2369 — NPN Switching Transistor February 2008
NPN Switching Transistor
• This device is designed for high speed saturated switching at
collector currents of 10mA to 100mA.
• Sourced from process 21. MMBT2369 PN2369 C E SOT-23 B TO-92
1 Mark: 1J Absolute Maximum Ratings * T a Symbol 1. Emitter 2. Base 3. Collector = 25×C unless otherwise noted Parameter Ratings Units VCEO Collector-Emitter Voltage 15 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage IC Collector Current ICP **Collector Current (Pulse) TJ, TSTG Operating and Storage Junction Temperature Range -Continuous 4.5 V 200 mA 400 mA -55 ~ 150 °C * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
** Pulse Test: Pulse Width £ 300ms, Duty Cycle £ 2.0%
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Ta = 25°C unless otherwise noted Max. Units PD Symbol
Total Device Dissipation
Derate above 25°C Parameter 350
2.8 mW
mW/°C RθJC Thermal Resistance, Junction to Case 125 °C/W RθJA Thermal Resistance, Junction to Ambient 357 °C/W * Device mounted on FR-4PCB 1.6” ¥ 1.6” ¥ 0.06”. © 2007 Fairchild Semiconductor Corporation
MMBT2369 / PN2369 Rev. 1.0.0 www.fairchildsemi.com
1 MMBT2369 / PN2369 — NPN Switching Transistor February 2008