Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics) - 6

HerstellerSTMicroelectronics
BeschreibungN-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages
Seiten / Seite23 / 6 — STD4NK50Z-1, STD4NK50ZT4. Electrical characteristics (curves). Figure 7. …
Dateiformat / GrößePDF / 585 Kb
DokumentenspracheEnglisch

STD4NK50Z-1, STD4NK50ZT4. Electrical characteristics (curves). Figure 7. Normalized gate threshold voltage vs

STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics (curves) Figure 7 Normalized gate threshold voltage vs

Modelllinie für dieses Datenblatt

Textversion des Dokuments

STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics (curves) Figure 7. Normalized gate threshold voltage vs Figure 8. Static drain-source on resistance temperature Figure 9. Source-drain diode forward characteristic Figure 10. Maximum avalanche energy vs temperature Figure 11. Normalized V(BR)DSS vs temperature Figure 12. Normalized on resistance vs temperature DS2913
-
Rev 3 page 6/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history