Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics) - 7

HerstellerSTMicroelectronics
BeschreibungN-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages
Seiten / Seite23 / 7 — STD4NK50Z-1, STD4NK50ZT4. Test circuits. Figure 13. Test circuit for …
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DokumentenspracheEnglisch

STD4NK50Z-1, STD4NK50ZT4. Test circuits. Figure 13. Test circuit for resistive load switching times

STD4NK50Z-1, STD4NK50ZT4 Test circuits Figure 13 Test circuit for resistive load switching times

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STD4NK50Z-1, STD4NK50ZT4 Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior
VDD 12 V 47 kΩ 1 kΩ 100 nF RL 2200 3.3 μF + μF VDD V I D G= CONST V 100 Ω D.U.T. GS R pulse width + G D.U.T. VGS 2.7 kΩ 2200 VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1
Figure 15. Test circuit for inductive load switching and Figure 16. Unclamped inductive load test circuit diode recovery times
A A A L D VD fast 100 µH G D.U.T. diode 2200 3.3 S B + µF µF V B B 3.3 1000 DD µF 25 Ω µF D + VDD ID G D.U.T. + RG S D.U.T. Vi _ pulse width AM01471v1 AM01470v1
Figure 18. Switching time waveform Figure 17. Unclamped inductive waveform
ton toff V(BR)DSS td(on) tr td(off) tf VD 90% 90% IDM 10% VDS 10% ID 0 VDD VDD VGS 90% 0 10% AM01472v1 AM01473v1
DS2913
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Rev 3 page 7/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history