Datasheet PEMD12, PUMD12 (Nexperia) - 10

NXP Semiconductors PEMD12; PUMD12 NPN/PNP resistor-equipped transistors; R1 = 47 k , R2 = 47 k
006aac760 006aac761 -10 -10 VI(on) (1) VI(off) (V) (V) (2) (1) (3) (2) -1 -1 (3) -10-1 -10-1 -10-1 -1 -102 -10 -10-1 -1 -10 IC (mA) IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C
Fig 12. TR2 (PNP): On-state input voltage as a Fig 13. TR2 (PNP): Off-state input voltage as a function of collector current; typical values function of collector current; typical values
006aac762 006aac763 9 103 Cc (pF) fT (MHz) 6 102 3 0 10 0 -10 -20 -30 -40 -50 -10-1 -1 -102 -10 VCB (V) IC (mA) f = 1 MHz; Tamb = 25 C VCE = 5 V; Tamb = 25 C
Fig 14. TR2 (PNP): Collector capacitance as a function Fig 15. TR2 (PNP): Transition frequency as a function of collector-base voltage; typical values of of collector current; typical values of built-in built-in transistor transistor
PEMD12_PUMD12 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 21 November 2011 9 of 16
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents