Datasheet APT40GF120J RD (APT) - 3
| Hersteller | APT |
| Beschreibung | Fast IGBT 1200V 60A |
| Seiten / Seite | 8 / 3 — APT40GF120JRD. Figure 1, Typical Output Characteristics (TJ = 25°C). … |
| Dateiformat / Größe | PDF / 118 Kb |
| Dokumentensprache | Englisch |
APT40GF120JRD. Figure 1, Typical Output Characteristics (TJ = 25°C). Figure 2, Typical Output Characteristics (TJ = 150°C)
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APT40GF120JRD
80 80 V V GE=17, 15 & 13V GE=17, 15 & 13V 11V 11V 60 60 10V 40 10V 40 9V 20 20 9V 8V , COLLECTOR CURRENT (AMPERES) , COLLECTOR CURRENT (AMPERES) I C 8V I C 7V 0 0 0 4 8 12 16 20 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C) Figure 2, Typical Output Characteristics (TJ = 150°C)
80 120 OPERATION LIMITED 250µsec. Pulse Test B Y VGE = 15V VCE (SAT) TC=-55°C 60 TC=+25°C T 100µs C=+150°C 40 10 1ms 20 TC =+25°C T , COLLECTOR CURRENT (AMPERES) , COLLECTOR CURRENT (AMPERES) J =+150°C 10ms I C I C SINGLE PULSE 1 0 0 2 4 6 8 1 10 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V Figure 4, Maximum Forward Safe Operating Area
20 10,000 IC = IC2 TJ = +25°C f = 1MHz 5,000 C 16 ies VCE=240V 12 VCE=600V 1,000 8 Coes 500 C, CAPACITANCE (pF) 4 Cres , GATE-TO-EMITTER VOLTAGE (VOLTS) GE 100 V 0 .01 0.1 1.0 10 50 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage
.32 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.02 0.01 DM t1 0.01 P 0.005 t2 SINGLE PULSE , THERMAL IMPEDANCE (°C/W) t Duty Factor D = 1/ JC t2 θZ Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6256 Rev B 7-2002
80 80 V V GE=17, 15 & 13V GE=17, 15 & 13V 11V 11V 60 60 10V 40 10V 40 9V 20 20 9V 8V , COLLECTOR CURRENT (AMPERES) , COLLECTOR CURRENT (AMPERES) I C 8V I C 7V 0 0 0 4 8 12 16 20 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (TJ = 25°C) Figure 2, Typical Output Characteristics (TJ = 150°C)
80 120 OPERATION LIMITED 250µsec. Pulse Test B Y VGE = 15V VCE (SAT) TC=-55°C 60 TC=+25°C T 100µs C=+150°C 40 10 1ms 20 TC =+25°C T , COLLECTOR CURRENT (AMPERES) , COLLECTOR CURRENT (AMPERES) J =+150°C 10ms I C I C SINGLE PULSE 1 0 0 2 4 6 8 1 10 100 1200 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ VGE = 15V Figure 4, Maximum Forward Safe Operating Area
20 10,000 IC = IC2 TJ = +25°C f = 1MHz 5,000 C 16 ies VCE=240V 12 VCE=600V 1,000 8 Coes 500 C, CAPACITANCE (pF) 4 Cres , GATE-TO-EMITTER VOLTAGE (VOLTS) GE 100 V 0 .01 0.1 1.0 10 50 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage Figure 6, Gate Charges vs Gate-To-Emitter Voltage
.32 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.02 0.01 DM t1 0.01 P 0.005 t2 SINGLE PULSE , THERMAL IMPEDANCE (°C/W) t Duty Factor D = 1/ JC t2 θZ Peak TJ = PDM x ZθJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6256 Rev B 7-2002