Datasheet APT40GF120J RD (APT) - 4
| Hersteller | APT |
| Beschreibung | Fast IGBT 1200V 60A |
| Seiten / Seite | 8 / 4 — APT40GF120JRD. Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature |
| Dateiformat / Größe | PDF / 118 Kb |
| Dokumentensprache | Englisch |
APT40GF120JRD. Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature
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APT40GF120JRD
5.0 80 4.0 60 IC1 I 2.0 C2 40 0.5 IC2 1.5 20 (SAT), COLLECTOR-TO-EMITTER CE SATURATION VOLTAGE (VOLTS) V , COLLECTOR CURRENT (AMPERES) I C 1.0 0 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature
1.2 40 VCC = 0.66 VCES VGE = +15V TJ = +25°C I 1.1 C = IC2 30 1 Eoff 20 0.9 Eon 10 VOLTAGE (NORMALIZED) 0.8 , COLLECTOR-TO-EMITTER BREAKDOWN SWITCHING ENERGY LOSSES (mJ) CESV 0.7 0 B -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance
50 8 VCC = 0.66 VCES VGE = +15V I T C1 J = +125°C RG = 10 Ω 6 IC2 1 4 0.5 IC2 Eoff 2 V E CC = 0.66 VCES on VGE = +15V SWITCHING ENERGY LOSSES (mJ) RG = 10 Ω TOTAL SWITCHING ENERGY LOSSES (mJ) 0.1 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current
50 For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C 10 Gate drive as specified Power dissapation = 110W ILOAD = IRMS of fundamental 1 , COLLECTOR CURRENT (AMPERES) I C .1 0.1 1.0 10 100 1000 F, FREQUENCY (kHz)
Figure 14,Typical Load Current vs Frequency
052-6256 Rev B 7-2002
5.0 80 4.0 60 IC1 I 2.0 C2 40 0.5 IC2 1.5 20 (SAT), COLLECTOR-TO-EMITTER CE SATURATION VOLTAGE (VOLTS) V , COLLECTOR CURRENT (AMPERES) I C 1.0 0 -50 -25 0 25 50 75 100 125 150 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature Figure 9, Maximum Collector Current vs Case Temperature
1.2 40 VCC = 0.66 VCES VGE = +15V TJ = +25°C I 1.1 C = IC2 30 1 Eoff 20 0.9 Eon 10 VOLTAGE (NORMALIZED) 0.8 , COLLECTOR-TO-EMITTER BREAKDOWN SWITCHING ENERGY LOSSES (mJ) CESV 0.7 0 B -50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) RG, GATE RESISTANCE (OHMS)
Figure 10, Breakdown Voltage vs Junction Temperature Figure 11, Typical Switching Energy Losses vs Gate Resistance
50 8 VCC = 0.66 VCES VGE = +15V I T C1 J = +125°C RG = 10 Ω 6 IC2 1 4 0.5 IC2 Eoff 2 V E CC = 0.66 VCES on VGE = +15V SWITCHING ENERGY LOSSES (mJ) RG = 10 Ω TOTAL SWITCHING ENERGY LOSSES (mJ) 0.1 0 -50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPERES)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature Figure 13, Typical Switching Energy Losses vs Collector Current
50 For Both: Duty Cycle = 50% TJ = +125°C Tsink = +90°C 10 Gate drive as specified Power dissapation = 110W ILOAD = IRMS of fundamental 1 , COLLECTOR CURRENT (AMPERES) I C .1 0.1 1.0 10 100 1000 F, FREQUENCY (kHz)
Figure 14,Typical Load Current vs Frequency
052-6256 Rev B 7-2002