Datasheet NXH006P120MNF2PTG (ON Semiconductor) - 4

NXH006P120MNF2PTG ELECTRICAL CHARACTERISTICS
(continued) TJ = 25 °C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit SiC MOSFET CHARACTERISTICS
Turn−on Delay Time td(on) – 54 – ns TJ = 25°C Rise Time tr – 21 – VDS= 600 V, ID = 200 A Turn−off Delay Time t V d(off) – 174 – GS = −5 V / 20 V, RG = 1.8 W Fall Time tf – 22 – Turn−on Switching Loss per Pulse EON – 2.1 – mJ Turn off Switching Loss per Pulse EOFF – 2.75 – Turn−on Delay Time td(on) – 48 – ns TJ = 150°C Rise Time tr – 19 – VDS = 600 V, ID = 200 A Turn−off Delay Time t V d(off) – 196 – GS = −5 V / 20 V, RG = 1.8 W Fall Time tf – 22 – Turn−on Switching Loss per Pulse EON – 2.3 – mJ Turn off Switching Loss per Pulse EOFF – 2.93 – Diode Forward Voltage ID = 200 A
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TJ = 25 °C VSD – 4.0 6 V ID = 200 A
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TJ = 150 °C – 3.6 – Thermal Resistance − chip−to−case Thermal grease, RthJC – 0.10 – °C/W Thickness = 2 Mil +2%, Thermal Resistance − chip−to−heatsink A = 2.8 W/mK RthJH – 0.21 – °C/W
THERMISTOR CHARACTERISTICS
Nominal resistance T = 25°C R25 – 5 – kW Nominal resistance T = 100°C R100 – 457 – W Deviation of R25 DR/R −3 – 3 % Power dissipation PD – 50 – mW Power dissipation constant – 5 – mW/K B−value B(25/50), tolerance ±3% – 3375 – K B−value B(25/100), tolerance ±3% – 3455 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION Orderable Part Number Marking Package Shipping
NXH006P120MNF2PTG NXH006P120MNF2PTG F2HALFBR: Case 180BY 20 Units / Blister Tray Press−fit Pins with pre−applied thermal interface material (TIM) (Pb-Free / Halide Free)
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