Datasheet NXH006P120MNF2PTG (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | F2HALFBR Module |
| Seiten / Seite | 10 / 3 — NXH006P120MNF2PTG. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SiC … |
| Revision | P3 |
| Dateiformat / Größe | PDF / 1.8 Mb |
| Dokumentensprache | Englisch |
NXH006P120MNF2PTG. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. SiC MOSFET. THERMAL PROPERTIES. INSULATION PROPERTIES
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NXH006P120MNF2
Textversion des Dokuments
NXH006P120MNF2PTG MAXIMUM RATINGS Rating Symbol Value Unit SiC MOSFET
Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V Continuous Drain Current @ Tc = 80°C ( TJ = 175°C) ID 304 A Pulsed Drain Current (TJ = 175°C) IDpulse 912 A Maximum Power Dissipation (TJ = 175°C) Ptot 950 W Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C Tsc 2.0 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C
THERMAL PROPERTIES
Storage Temperature range Tstg −40 to 150 °C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz Vis 3000 VRMS Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.
RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit
Module Operating Junction Temperature TJ −40 175 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit SiC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage VGS = 0 V, ID = 800 mA V(BR)DSS 1200 − − V Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V IDSS – − 300 mA Drain−Source On Resistance VGS = 20 V, ID = 200 A, TJ = 25 °C RDS(ON) – 5.48 7.2 mW VGS = 20 V, ID = 200 A, TJ = 125 °C − 6.52 − VGS = 20 V, ID = 200 A, TJ = 150 °C – 7.28 – Gate−Source Threshold Voltage VGS = VDS, ID = 80 mA VGS(TH) 1.8 2.83 4.3 V Gate Leakage Current VGS = −10 V / 20 V, VDS = 0 V IGSS –1000 − 1000 nA Forward Transconductance VDS = 10 V, ID = 200 A gFS 14 S Internal Gate Resistance RG − W Input Capacitance CISS – 6687 – pF VDS = 800 V. VGS = 0 V. f = 1 MHz Reverse Transfer Capacitance CRSS – 49 – Output Capacitance COSS – 1092 – COSS Stored Energy VDS = 0 V to 800 V. VGS = 0 V. EOSS – 349 – mJ Total Gate Charge VDS = 800 V. VGS = 20 V. ID = 200 A QG(TOTAL) – 847 – nC Gate−Source Charge QGS – 231 – nC Gate−Drain Charge QGD – 195 – nC
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Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V Continuous Drain Current @ Tc = 80°C ( TJ = 175°C) ID 304 A Pulsed Drain Current (TJ = 175°C) IDpulse 912 A Maximum Power Dissipation (TJ = 175°C) Ptot 950 W Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C Tsc 2.0 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C
THERMAL PROPERTIES
Storage Temperature range Tstg −40 to 150 °C
INSULATION PROPERTIES
Isolation test voltage, t = 1 sec, 60 Hz Vis 3000 VRMS Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.
RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit
Module Operating Junction Temperature TJ −40 175 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise noted
Parameter Test Conditions Symbol Min Typ Max Unit SiC MOSFET CHARACTERISTICS
Drain−Source Breakdown Voltage VGS = 0 V, ID = 800 mA V(BR)DSS 1200 − − V Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V IDSS – − 300 mA Drain−Source On Resistance VGS = 20 V, ID = 200 A, TJ = 25 °C RDS(ON) – 5.48 7.2 mW VGS = 20 V, ID = 200 A, TJ = 125 °C − 6.52 − VGS = 20 V, ID = 200 A, TJ = 150 °C – 7.28 – Gate−Source Threshold Voltage VGS = VDS, ID = 80 mA VGS(TH) 1.8 2.83 4.3 V Gate Leakage Current VGS = −10 V / 20 V, VDS = 0 V IGSS –1000 − 1000 nA Forward Transconductance VDS = 10 V, ID = 200 A gFS 14 S Internal Gate Resistance RG − W Input Capacitance CISS – 6687 – pF VDS = 800 V. VGS = 0 V. f = 1 MHz Reverse Transfer Capacitance CRSS – 49 – Output Capacitance COSS – 1092 – COSS Stored Energy VDS = 0 V to 800 V. VGS = 0 V. EOSS – 349 – mJ Total Gate Charge VDS = 800 V. VGS = 20 V. ID = 200 A QG(TOTAL) – 847 – nC Gate−Source Charge QGS – 231 – nC Gate−Drain Charge QGD – 195 – nC
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