Datasheet 2N6052 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | 12 A, 100 V PNP Darlington Complementary Silicon Power Transistors |
| Seiten / Seite | 6 / 3 — 2N6052. Figure 4. Thermal Response. ACTIVE−REGION SAFE OPERATING AREA. … |
| Revision | 5 |
| Dateiformat / Größe | PDF / 186 Kb |
| Dokumentensprache | Englisch |
2N6052. Figure 4. Thermal Response. ACTIVE−REGION SAFE OPERATING AREA. Figure 5. Figure 6. Small−Signal Current Gain
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2N6052
1.0 0.7 D = 0.5 0.5 THERMAL 0.3 0.2 0.2 0.1 R P q (pk) JC(t) = r(t) RqJC 0.1 TRANSIENT 0.05 RqJC = 1.17°C/W MAX 0.07 ANCE (NORMALIZED) D CURVES APPLY FOR POWER 0.02 0.05 PULSE TRAIN SHOWN t1 READ TIME AT t1 t RESIST 0.03 2 0.01 , EFFECTIVE TJ(pk) - TC = P(pk) qJC(t) 0.02 DUTY CYCLE, D = t SINGLE 1/t2 r(t) PULSE 0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms)
Figure 4. Thermal Response
There are two limitations on the power handling ability of
ACTIVE−REGION SAFE OPERATING AREA
a transistor: average junction temperature and second 50 breakdown. Safe operating area curves indicate IC − VCE 0.1 ms limits of the transistor that must be observed for reliable 20 operation; i.e., the transistor must not be subjected to greater 10 (AMP) dissipation than the curves indicate. 5.0 0.5 ms The data of Figures 5, and 6 is based on TJ(pk) = 200_C; 1.0 ms T 2.0 C is variable depending on conditions. Second breakdown 5.0 ms pulse limits are valid for duty cycles to 10% provided OR CURRENT 1.0 TJ = 200°C TJ(pk) v 200_C; TJ(pk) may be calculated from the data in 0.5 Figure 4. At high case temperatures, thermal limitations will SECOND BREAKDOWN LIMITED reduce the power that can be handled to values less than the , COLLECT 0.2 BONDING WIRE LIMITED I C d limitations imposed by second breakdown. 0.1 THERMAL LIMITATION c @TC = 25°C (SINGLE PULSE) 0.0510 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5.
500 3000 2000 TC = 25°C TJ = 25°C VCE = 3.0 V GAIN 300 1000 IC = 5.0 A 500 200 Cib CURRENT ANCE (pF) ACIT 200 Cob C, CAP 100 100 , SMALL-SIGNAL fe 70 h 50 30 50 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Small−Signal Current Gain Figure 7. Capacitance http://onsemi.com 3
2N6052
1.0 0.7 D = 0.5 0.5 THERMAL 0.3 0.2 0.2 0.1 R P q (pk) JC(t) = r(t) RqJC 0.1 TRANSIENT 0.05 RqJC = 1.17°C/W MAX 0.07 ANCE (NORMALIZED) D CURVES APPLY FOR POWER 0.02 0.05 PULSE TRAIN SHOWN t1 READ TIME AT t1 t RESIST 0.03 2 0.01 , EFFECTIVE TJ(pk) - TC = P(pk) qJC(t) 0.02 DUTY CYCLE, D = t SINGLE 1/t2 r(t) PULSE 0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms)
Figure 4. Thermal Response
There are two limitations on the power handling ability of
ACTIVE−REGION SAFE OPERATING AREA
a transistor: average junction temperature and second 50 breakdown. Safe operating area curves indicate IC − VCE 0.1 ms limits of the transistor that must be observed for reliable 20 operation; i.e., the transistor must not be subjected to greater 10 (AMP) dissipation than the curves indicate. 5.0 0.5 ms The data of Figures 5, and 6 is based on TJ(pk) = 200_C; 1.0 ms T 2.0 C is variable depending on conditions. Second breakdown 5.0 ms pulse limits are valid for duty cycles to 10% provided OR CURRENT 1.0 TJ = 200°C TJ(pk) v 200_C; TJ(pk) may be calculated from the data in 0.5 Figure 4. At high case temperatures, thermal limitations will SECOND BREAKDOWN LIMITED reduce the power that can be handled to values less than the , COLLECT 0.2 BONDING WIRE LIMITED I C d limitations imposed by second breakdown. 0.1 THERMAL LIMITATION c @TC = 25°C (SINGLE PULSE) 0.0510 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5.
500 3000 2000 TC = 25°C TJ = 25°C VCE = 3.0 V GAIN 300 1000 IC = 5.0 A 500 200 Cib CURRENT ANCE (pF) ACIT 200 Cob C, CAP 100 100 , SMALL-SIGNAL fe 70 h 50 30 50 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Small−Signal Current Gain Figure 7. Capacitance http://onsemi.com 3