Datasheet 2N6052 (ON Semiconductor) - 4
| Hersteller | ON Semiconductor |
| Beschreibung | 12 A, 100 V PNP Darlington Complementary Silicon Power Transistors |
| Seiten / Seite | 6 / 4 — 2N6052. Figure 8. DC Current Gain. Figure 9. Collector Saturation Region. … |
| Revision | 5 |
| Dateiformat / Größe | PDF / 186 Kb |
| Dokumentensprache | Englisch |
2N6052. Figure 8. DC Current Gain. Figure 9. Collector Saturation Region. Figure 10. “On” Voltages. http://onsemi.com
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Textversion des Dokuments
2N6052
20,000 VCE = 3.0 V 10,000 TJ = 150°C 5000 GAIN 3000 25°C 2000 , DC CURRENT 1000 -55°C FEh 500 300 2000.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0 TS) TJ = 25°C 2.6 TAGE (VOL IC = 3.0 A 6.0 A 9.0 A 12 A 2.2 1.8 OR-EMITTER VOL 1.4 , COLLECT CEV 1.00.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 TJ = 25°C 2.5 TS) 2.0 TAGE (VOL 1.5 VBE(sat) @ IC/IB = 250 , VOL V VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.50.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages http://onsemi.com 4
20,000 VCE = 3.0 V 10,000 TJ = 150°C 5000 GAIN 3000 25°C 2000 , DC CURRENT 1000 -55°C FEh 500 300 2000.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
3.0 TS) TJ = 25°C 2.6 TAGE (VOL IC = 3.0 A 6.0 A 9.0 A 12 A 2.2 1.8 OR-EMITTER VOL 1.4 , COLLECT CEV 1.00.5 1.0 2.0 3.0 5.0 10 20 30 50 IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
3.0 TJ = 25°C 2.5 TS) 2.0 TAGE (VOL 1.5 VBE(sat) @ IC/IB = 250 , VOL V VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.50.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages http://onsemi.com 4