Datasheet BSS89 (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | SIPMOS Small-Signal-Transistor |
| Seiten / Seite | 8 / 4 — Rev. 2.2. BSP89. 1 Power dissipation. 2 Drain current. 3 Safe operating … |
| Revision | 02_02 |
| Dateiformat / Größe | PDF / 668 Kb |
| Dokumentensprache | Englisch |
Rev. 2.2. BSP89. 1 Power dissipation. 2 Drain current. 3 Safe operating area. 4 Transient thermal impedance
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Rev. 2.2 BSP89 1 Power dissipation 2 Drain current
Ptot = f (TA) ID = f (TA) parameter: VGS³ 10 V BSP89 BSP89 1.9 0.38 W A 1.6 0.32 1.4 0.28 tot 1.2 P 0.24 I D 1 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TA TA
3 Safe operating area 4 Transient thermal impedance
ID = f ( VDS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = tp/T 1 10 BSP89 2 10 BSP89 A K/W tp = 160.0µs 0 10 / I D 1 10 V DS = 1 ms I D R DS(on) Z thJA -1 10 ms 10 0 10 D = 0.50 0.20 0.10 0.05 -2 10 -1 10 single pulse 0.02 DC 0.01 -3 10 -2 10 10 0 10 1 10 2 10 3 V 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s VDS tp Page 4 201211-29
Ptot = f (TA) ID = f (TA) parameter: VGS³ 10 V BSP89 BSP89 1.9 0.38 W A 1.6 0.32 1.4 0.28 tot 1.2 P 0.24 I D 1 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TA TA
3 Safe operating area 4 Transient thermal impedance
ID = f ( VDS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = tp/T 1 10 BSP89 2 10 BSP89 A K/W tp = 160.0µs 0 10 / I D 1 10 V DS = 1 ms I D R DS(on) Z thJA -1 10 ms 10 0 10 D = 0.50 0.20 0.10 0.05 -2 10 -1 10 single pulse 0.02 DC 0.01 -3 10 -2 10 10 0 10 1 10 2 10 3 V 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s VDS tp Page 4 201211-29