Datasheet BSS89 (Infineon) - 3
| Hersteller | Infineon |
| Beschreibung | SIPMOS Small-Signal-Transistor |
| Seiten / Seite | 8 / 3 — Rev. 2.2. BSP89. Electrical Characteristics. Parameter. Symbol. … |
| Revision | 02_02 |
| Dateiformat / Größe | PDF / 668 Kb |
| Dokumentensprache | Englisch |
Rev. 2.2. BSP89. Electrical Characteristics. Parameter. Symbol. Conditions. Values. Unit. min. typ. max. Dynamic Characteristics
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Rev. 2.2 BSP89 Electrical Characteristics
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics
Transconductance gfs VDS³2*ID*RDS(on)max, 0.18 0.36 - S ID=0.28A Input capacitance Ciss VGS=0, VDS=25V, - 80 140 pF Output capacitance C f=1MHz oss - 11.2 16.8 Reverse transfer capacitance Crss - 5.2 7.8 Turn-on delay time td(on) VDD=120V, VGS=10V, - 4 6 ns Rise time t I r D=0.35A, RG=6W - 3.5 5.3 Turn-off delay time td(off) - 15.9 23.8 Fall time tf - 18.4 27.6
Gate Charge Characteristics
Gate to source charge Qgs VDD=192V, ID=0.35A - 0.2 0.3 nC Gate to drain charge Qgd - 2 3 Gate charge total Qg VDD=192V, ID=0.35A, - 4.3 6.4 VGS=0 to 10V Gate plateau voltage V(plateau) VDD=192V, ID = 0.35 A - 3.1 - V
Reverse Diode
Inverse diode continuous IS TA=25°C - - 0.35 A forward current Inv. diode direct current, pulsed ISM - - 1.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.85 1.2 V Reverse recovery time trr VR=120V, IF=lS, - 67 100 ns Reverse recovery charge Q di rr F/dt=100A/µs - 123 184 nC Page 3 2012-11-29
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics
Transconductance gfs VDS³2*ID*RDS(on)max, 0.18 0.36 - S ID=0.28A Input capacitance Ciss VGS=0, VDS=25V, - 80 140 pF Output capacitance C f=1MHz oss - 11.2 16.8 Reverse transfer capacitance Crss - 5.2 7.8 Turn-on delay time td(on) VDD=120V, VGS=10V, - 4 6 ns Rise time t I r D=0.35A, RG=6W - 3.5 5.3 Turn-off delay time td(off) - 15.9 23.8 Fall time tf - 18.4 27.6
Gate Charge Characteristics
Gate to source charge Qgs VDD=192V, ID=0.35A - 0.2 0.3 nC Gate to drain charge Qgd - 2 3 Gate charge total Qg VDD=192V, ID=0.35A, - 4.3 6.4 VGS=0 to 10V Gate plateau voltage V(plateau) VDD=192V, ID = 0.35 A - 3.1 - V
Reverse Diode
Inverse diode continuous IS TA=25°C - - 0.35 A forward current Inv. diode direct current, pulsed ISM - - 1.4 Inverse diode forward voltage VSD VGS=0, IF = IS - 0.85 1.2 V Reverse recovery time trr VR=120V, IF=lS, - 67 100 ns Reverse recovery charge Q di rr F/dt=100A/µs - 123 184 nC Page 3 2012-11-29