Datasheet BSS89 (Infineon)
| Hersteller | Infineon |
| Beschreibung | SIPMOS Small-Signal-Transistor |
| Seiten / Seite | 8 / 1 — Rev. 2.2. BSP89. SIPMOS. Small-Signal-Transistor. Product Summary. … |
| Revision | 02_02 |
| Dateiformat / Größe | PDF / 668 Kb |
| Dokumentensprache | Englisch |
Rev. 2.2. BSP89. SIPMOS. Small-Signal-Transistor. Product Summary. Feature. Type. Package. Tape and Reel Information. Marking Packaging
Modelllinie für dieses Datenblatt
Textversion des Dokuments
Rev. 2.2 BSP89 SIPMOS
Ò
Small-Signal-Transistor Product Summary Feature
VDS 240 V · N-Channel RDS(on) 6 W · Enhancement mode ID 0.35 A · Logic Level · dv/dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant 4 • ee lead plating; RoHS compliant 4.5V rated x Qualified according to AEC Q101 3 2 • Halogenfree according to IEC61249221 1 VPS05163
Type Package Tape and Reel Information Marking Packaging
BSP89 PG-SOT223 H6327: 1000 pcs/reel BSP89 Non dry
Maximum Ratings
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A TA=25°C 0.35 TA=70°C 0.28 Pulsed drain current ID puls 1.4 TA=25°C Reverse diode dv/dt dv/dt 6 kV/µs IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage VGS ±20 V ESD class (JESD22-A114-HBM) 1A (>250V, <500V) Power dissipation Ptot 1.8 W TA=25°C Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2012-11-29
Ò
Small-Signal-Transistor Product Summary Feature
VDS 240 V · N-Channel RDS(on) 6 W · Enhancement mode ID 0.35 A · Logic Level · dv/dt rated PG-SOT223 • Pb-free lead plating; RoHS compliant 4 • ee lead plating; RoHS compliant 4.5V rated x Qualified according to AEC Q101 3 2 • Halogenfree according to IEC61249221 1 VPS05163
Type Package Tape and Reel Information Marking Packaging
BSP89 PG-SOT223 H6327: 1000 pcs/reel BSP89 Non dry
Maximum Ratings
, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current ID A TA=25°C 0.35 TA=70°C 0.28 Pulsed drain current ID puls 1.4 TA=25°C Reverse diode dv/dt dv/dt 6 kV/µs IS=0.35A, VDS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage VGS ±20 V ESD class (JESD22-A114-HBM) 1A (>250V, <500V) Power dissipation Ptot 1.8 W TA=25°C Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2012-11-29