Datasheet IQE013N04LM6 (Infineon) - 8

OptiMOSTMPower-MOSFET,40V IQE013N04LM6 Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage
2.0 2.00 1.75 1.6 1.50 1.25 1.2
[V]
1.00
GS(th)
510 µA 0.8
V (normalizedto25°C)
0.75
DS(on)
51 µA
R
0.50 0.4 0.25 0.0 0.00 -80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
T j[°C] T j[°C]
RDS(on)=f(Tj),ID=20A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode
104 103 25 °C 25 °C, max 175 °C 175 °C, max Ciss 103 102 Coss
[pF] [A] C F I
102 101 Crss 101 100 0 5 10 15 20 25 30 35 40 0.00 0.25 0.50 0.75 1.00 1.25
V DS[V] V SD[V]
C=f(VDS);VGS=0V;f=1MHz IF=f(VSD);parameter:Tj Final Data Sheet 8 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer