Datasheet IQE013N04LM6 (Infineon) - 7

OptiMOSTMPower-MOSFET,40V IQE013N04LM6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance
160 3.5 3 V 140 10 V 3.0 3.5 V 120 4 V 3 V 2.5 5 V 3.5 V 100 4.5 V
]
Ω 2.0
[A]
80
[m
4 V
D I
1.5
DS(on)
4.5 V 60
R
5 V 2.8 V 1.0 10 V 40 20 0.5 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 80 100 120 140 160
V DS[V] I D[A]
ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance
800 3.5 700 3.0 600 25 °C 2.5 175 °C 500
]
175 °C Ω 2.0
[A]
400
[m D I
1.5
DS(on)
300
R
25 °C 1.0 200 100 0.5 0 0.0 0 1 2 3 4 5 0 2 4 6 8 10
V GS[V] V GS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj RDS(on)=f(VGS),ID=20A;parameter:Tj Final Data Sheet 7 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer