Datasheet IQE013N04LM6 (Infineon)
Hersteller | Infineon |
Beschreibung | OptiMOS Power-MOSFET, 40V |
Seiten / Seite | 13 / 1 — IQE013N04LM6. MOSFET OptiMOSTMPower-MOSFET,40V. Features. … |
Revision | 02_00 |
Dateiformat / Größe | PDF / 1.4 Mb |
Dokumentensprache | Englisch |
IQE013N04LM6. MOSFET OptiMOSTMPower-MOSFET,40V. Features. Productvalidation. Table1KeyPerformanceParameters. Parameter. Value. Unit
Modelllinie für dieses Datenblatt
Textversion des Dokuments
IQE013N04LM6 MOSFET OptiMOSTMPower-MOSFET,40V
PG-TSON-8-4
Features
1 2 •Optimizedforsynchronousrectification 3 4 •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance 8 •N-channel,logiclevel 7 6 5 •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications Drain Pin 5-8
Table1KeyPerformanceParameters
Gate Pin 4
Parameter Value Unit
Source VDS 40 V Pin 1-3 RDS(on),max 1.35 mΩ ID 205 A Qoss 45 nC Qg(0V..10V) 41 nC
Type/OrderingCode Package Marking RelatedLinks
IQE013N04LM6 PG-TSON-8-4 01304L6 - Final Data Sheet 1 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer