Datasheet IQE013N04LM6 (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | OptiMOS Power-MOSFET, 40V |
| Seiten / Seite | 13 / 4 — OptiMOSTMPower-MOSFET,40V IQE013N04LM6. 3Electricalcharacteristics. … |
| Revision | 02_00 |
| Dateiformat / Größe | PDF / 1.4 Mb |
| Dokumentensprache | Englisch |
OptiMOSTMPower-MOSFET,40V IQE013N04LM6. 3Electricalcharacteristics. Table4Staticcharacteristics. Values. Parameter. Symbol
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OptiMOSTMPower-MOSFET,40V IQE013N04LM6 3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=51µA - 0.1 1 V Zero gate voltage drain current I DS=40V,VGS=0V,Tj=25°C DSS µA - 10 100 VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V - 1.5 1.9 Drain-source on-state resistance RDS(on) mΩ VGS=4.5V,ID=20A - 1.1 1.35 VGS=10V,ID=20A Gate resistance RG - 0.9 - Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Input capacitance1) Ciss - 2900 3900 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 930 1200 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 27 40 pF VGS=0V,VDS=20V,f=1MHz V Turn-on delay time t DD=20V,VGS=10V,ID=20A, d(on) - 7.1 - ns RG,ext=1.6Ω V Rise time t DD=20V,VGS=10V,ID=20A, r - 3.6 - ns RG,ext=1.6Ω V Turn-off delay time t DD=20V,VGS=10V,ID=20A, d(off) - 21.0 - ns RG,ext=1.6Ω V Fall time t DD=20V,VGS=10V,ID=20A, f - 4.9 - ns RG,ext=1.6Ω
Table6Gatechargecharacteristics2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Gate to source charge Qgs - 7 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge at threshold Qg(th) - 4.6 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 5.0 8 nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 8 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 41 55 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 20 26 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 17 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 45 60 nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=51µA - 0.1 1 V Zero gate voltage drain current I DS=40V,VGS=0V,Tj=25°C DSS µA - 10 100 VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V - 1.5 1.9 Drain-source on-state resistance RDS(on) mΩ VGS=4.5V,ID=20A - 1.1 1.35 VGS=10V,ID=20A Gate resistance RG - 0.9 - Ω - Transconductance gfs 65 130 - S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Input capacitance1) Ciss - 2900 3900 pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 930 1200 pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 27 40 pF VGS=0V,VDS=20V,f=1MHz V Turn-on delay time t DD=20V,VGS=10V,ID=20A, d(on) - 7.1 - ns RG,ext=1.6Ω V Rise time t DD=20V,VGS=10V,ID=20A, r - 3.6 - ns RG,ext=1.6Ω V Turn-off delay time t DD=20V,VGS=10V,ID=20A, d(off) - 21.0 - ns RG,ext=1.6Ω V Fall time t DD=20V,VGS=10V,ID=20A, f - 4.9 - ns RG,ext=1.6Ω
Table6Gatechargecharacteristics2) Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Gate to source charge Qgs - 7 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge at threshold Qg(th) - 4.6 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 5.0 8 nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 8 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 41 55 nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.6 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 20 26 nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 17 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 45 60 nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer