Datasheet IQE013N04LM6 (Infineon) - 3

OptiMOSTMPower-MOSFET,40V IQE013N04LM6 1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
- - 205 VGS=10V,TC=25°C - - 145 VGS=10V,TC=100°C Continuous drain current1) ID - - 170 A VGS=4.5V,TC=25°C - - 120 VGS=4.5V,TC=100°C - - 31 VGS=10V,TA=25°C,RthJA=60K/W2) Pulsed drain current3) ID,pulse - - 820 A TC=25°C Avalanche current, single pulse4) IAS - - 50 A TC=25°C Avalanche energy, single pulse EAS - - 255 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - - - 107 T Power dissipation P C=25°C tot W - - 2.5 TA=25°C,RthJA=60K/W2) IEC climatic category; Operating and storage temperature Tj,Tstg -55 - 175 °C DIN IEC 68-1: 55/175/56
2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max.
Thermal resistance, junction - case RthJC - - 1.4 K/W - Device on PCB, R 6 cm2 cooling area2) thJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Final Data Sheet 3 Rev.2.0,2020-07-15 Document Outline Description Table of Contents Maximum ratings Thermal characteristics Electrical characteristics Static characteristics Dynamic characteristics Gate charge characteristics Reverse diode Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Electrical characteristics diagrams Package Outlines Revision History Trademarks Disclaimer