Datasheet SiZ240DT (Vishay) - 4

SiZ240DT
www.vishay.com Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 100 10000 V = 10 V thru 5 V GS T = -55 °C C 80 ) 75 ) T = 125 °C C V = 4 V GS 1000 1000 60 rrent (A ne ne rrent (A ine u ne ne ine u 50 C C n 1st li 2nd li n 2nd l 1st li 2nd li 40 2nd l rai rai D 100 D - 100 - I D V = 3 V GS I D 25 T = 25 °C 20 C 0 10 0 10 0 1 2 3 4 0 1.5 3 4.5 6 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
Axis Title Axis Title 0.015 10000 10 000 10000 ) 0.012 Ω Ciss V = 4.5 V GS 1000 1000 1000 (pF) 0.009 V = 10 V GS ne ne ne ine ne ine tance Resistance ( Coss 1st li n- 2nd li 2nd l 1st li 2nd li 0.006 2nd l O apaci - C ) 100 100 100 n C - DS(o 0.003 R Crss 0 10 10 10 0 20 40 60 80 100 0 10 20 30 40 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current Capacitance
Axis Title Axis Title 10 10000 1.8 10000 I = 10 A D V = 10 V, 10 A GS ) d) e (V 8 liz a 1.5 ltage o 1000 1000 6 ne ne ne ine ne ine 1.2 ource V V = 10 V, 20 V, 32 V DS 1st li V = 4.5 V, 7 A 2nd li GS 2nd l 1st li 2nd li 4 2nd l 100 100 ate-to-S n-Resistance (Norm G O 0.9 - - 2 GS (on) V S DR 0 10 0.6 10 0 4 8 12 16 -50 -25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
S19-1100-Rev. B, 30-Dec-2019
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