Datasheet SiZ240DT (Vishay)
| Hersteller | Vishay |
| Beschreibung | Dual N-Channel 40 V (D-S) MOSFETs |
| Seiten / Seite | 14 / 1 — SiZ240DT. Dual N-Channel 40 V (D-S) MOSFETs. FEATURES. PowerPAIR® 3 x 3S. … |
| Dateiformat / Größe | PDF / 339 Kb |
| Dokumentensprache | Englisch |
SiZ240DT. Dual N-Channel 40 V (D-S) MOSFETs. FEATURES. PowerPAIR® 3 x 3S. PRODUCT SUMMARY. APPLICATIONS. CHANNEL-1. CHANNEL-2
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SiZ240DT
www.vishay.com Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3S
G2 S • TrenchFET® Gen IV power MOSFETs 2 S S 2 8 2 7 6 • Integrated MOSFET half-bridge power stage 5 S /D2 1 (Pin 9) • 100 % Rg and UIS tested D1 • Optimized Qgs/Qgs ratio improves switching characteristics 3.3 mm 1 2 3 G 1 4 1 D • Material categorization: for definitions of compliance 3.3 mm 1 D D 1 1 please see www.vishay.com/doc?99912 Top View Bottom View
PRODUCT SUMMARY APPLICATIONS
D1
CHANNEL-1 CHANNEL-2
• Synchronous buck converter V G DS (V) 40 40 • Telecom DC/DC 1 RDS(on) max. (Ω) at VGS = 10 V 0.00805 0.00841 • POL N-Channel 1 S1/D2 MOSFET RDS(on) max. (Ω) at VGS = 4.5 V 0.01225 0.01330 • Motor drive control Qg typ. (nC) 6.9 6.5 G2 ID (A) 48 a 47 a N-Channel 2 Configuration Dual MOSFET S2
ORDERING INFORMATION
Package PowerPAIR 3 x 3S Lead (Pb)-free and halogen-free SiZ240DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage VDS 40 40 V Gate-source voltage VGS +20, -16 +20, -16 TC = 25 °C 48 a 47 a T Continuous drain current (T C = 70 °C 38 37 J = 150 °C) ID TA = 25 °C 17.2 b, c 16.9 b, c TA = 70 °C 13.8 b, c 13.5 b, c A Pulsed drain current (100 μs pulse width) IDM 100 100 T 27 27 Continuous source drain diode current C = 25 °C IS TA = 25 °C 3.6 b, c 3.6 b, c Single pulse avalanche current I L = 0.1 mH AS 15 15 Single pulse avalanche energy EAS 11 11 mJ TC = 25 °C 33 33 T Maximum power dissipation C = 70 °C 21 21 PD W TA = 25 °C 4.3 b, c 4.3 b, c TA = 70 °C 2.8 b, c 2.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d 260
THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX.
Maximum junction-to-ambient b, f t ≤ 10 s RthJA 23 29 23 29 °C/W Maximum junction-to-case (drain) Steady state RthJC 3 3.8 3 3.8
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2 S19-1100-Rev. B, 30-Dec-2019
1
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFETs FEATURES PowerPAIR® 3 x 3S
G2 S • TrenchFET® Gen IV power MOSFETs 2 S S 2 8 2 7 6 • Integrated MOSFET half-bridge power stage 5 S /D2 1 (Pin 9) • 100 % Rg and UIS tested D1 • Optimized Qgs/Qgs ratio improves switching characteristics 3.3 mm 1 2 3 G 1 4 1 D • Material categorization: for definitions of compliance 3.3 mm 1 D D 1 1 please see www.vishay.com/doc?99912 Top View Bottom View
PRODUCT SUMMARY APPLICATIONS
D1
CHANNEL-1 CHANNEL-2
• Synchronous buck converter V G DS (V) 40 40 • Telecom DC/DC 1 RDS(on) max. (Ω) at VGS = 10 V 0.00805 0.00841 • POL N-Channel 1 S1/D2 MOSFET RDS(on) max. (Ω) at VGS = 4.5 V 0.01225 0.01330 • Motor drive control Qg typ. (nC) 6.9 6.5 G2 ID (A) 48 a 47 a N-Channel 2 Configuration Dual MOSFET S2
ORDERING INFORMATION
Package PowerPAIR 3 x 3S Lead (Pb)-free and halogen-free SiZ240DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-source voltage VDS 40 40 V Gate-source voltage VGS +20, -16 +20, -16 TC = 25 °C 48 a 47 a T Continuous drain current (T C = 70 °C 38 37 J = 150 °C) ID TA = 25 °C 17.2 b, c 16.9 b, c TA = 70 °C 13.8 b, c 13.5 b, c A Pulsed drain current (100 μs pulse width) IDM 100 100 T 27 27 Continuous source drain diode current C = 25 °C IS TA = 25 °C 3.6 b, c 3.6 b, c Single pulse avalanche current I L = 0.1 mH AS 15 15 Single pulse avalanche energy EAS 11 11 mJ TC = 25 °C 33 33 T Maximum power dissipation C = 70 °C 21 21 PD W TA = 25 °C 4.3 b, c 4.3 b, c TA = 70 °C 2.8 b, c 2.8 b, c Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) d 260
THERMAL RESISTANCE RATINGS CHANNEL-1 CHANNEL-2 PARAMETER SYMBOL UNIT TYP. MAX. TYP. MAX.
Maximum junction-to-ambient b, f t ≤ 10 s RthJA 23 29 23 29 °C/W Maximum junction-to-case (drain) Steady state RthJC 3 3.8 3 3.8
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2 S19-1100-Rev. B, 30-Dec-2019
1
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000