Datasheet SiZ240DT (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | Dual N-Channel 40 V (D-S) MOSFETs |
| Seiten / Seite | 14 / 3 — SiZ240DT. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. … |
| Dateiformat / Größe | PDF / 339 Kb |
| Dokumentensprache | Englisch |
SiZ240DT. SPECIFICATIONS. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX. UNIT. Dynamic a. Drain-Source Body Diode Characteristics. Notes
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SiZ240DT
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic a
Ch-1 - 15 30 Turn-on delay time td(on) Ch-2 - 11 20 Channel-1 VDD = 20 V, RL = 4 Ω Ch-1 - 6 12 Rise time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 - 5 10 Channel-2 Ch-1 - 25 50 Turn-off delay time td(off) VDD = 20 V, RL = 4 Ω Ch-2 - 23 45 ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-1 - 5 10 Fall time tf Ch-2 - 5 10 ns Ch-1 - 25 50 Turn-on delay time td(on) Ch-2 - 22 44 Channel-1 VDD = 20 V, RL = 4 Ω Ch-1 - 55 110 Rise time tr ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 - 45 90 Channel-2 Ch-1 - 25 50 Turn-off delay time td(off) VDD = 20 V, RL = 4 Ω Ch-2 - 23 46 ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 - 8 16 Fall time tf Ch-2 - 10 20
Drain-Source Body Diode Characteristics
Ch-1 - - 27 Continuous source-drain diode current IS TC = 25 °C Ch-2 - - 27 A Ch-1 - - 100 Pulse diode forward current (t = 100 μs) ISM Ch-2 - - 100 IS = 5 A, VGS = 0 V Ch-1 - 0.8 1.2 Body diode voltage VSD V IS = 5 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 19 38 Body diode reverse recovery time trr ns Channel-1 Ch-2 - 18 36 IF = 5 A, di/dt = 100 A/μs, Ch-1 - 10 20 Body diode reverse recovery charge Qrr T nC J = 25 °C Ch-2 - 8 16 Channel-2 Ch-1 - 9.5 - Reverse recovery fall time ta IF = 5 A, di/dt = 100 A/μs, Ch-2 - 9 - T ns J = 25 °C Ch-1 - 9.5 - Reverse recovery rise time tb Ch-2 - 8.5 -
Notes
a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1100-Rev. B, 30-Dec-2019
3
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Dynamic a
Ch-1 - 15 30 Turn-on delay time td(on) Ch-2 - 11 20 Channel-1 VDD = 20 V, RL = 4 Ω Ch-1 - 6 12 Rise time tr ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-2 - 5 10 Channel-2 Ch-1 - 25 50 Turn-off delay time td(off) VDD = 20 V, RL = 4 Ω Ch-2 - 23 45 ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω Ch-1 - 5 10 Fall time tf Ch-2 - 5 10 ns Ch-1 - 25 50 Turn-on delay time td(on) Ch-2 - 22 44 Channel-1 VDD = 20 V, RL = 4 Ω Ch-1 - 55 110 Rise time tr ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-2 - 45 90 Channel-2 Ch-1 - 25 50 Turn-off delay time td(off) VDD = 20 V, RL = 4 Ω Ch-2 - 23 46 ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω Ch-1 - 8 16 Fall time tf Ch-2 - 10 20
Drain-Source Body Diode Characteristics
Ch-1 - - 27 Continuous source-drain diode current IS TC = 25 °C Ch-2 - - 27 A Ch-1 - - 100 Pulse diode forward current (t = 100 μs) ISM Ch-2 - - 100 IS = 5 A, VGS = 0 V Ch-1 - 0.8 1.2 Body diode voltage VSD V IS = 5 A, VGS = 0 V Ch-2 - 0.8 1.2 Ch-1 - 19 38 Body diode reverse recovery time trr ns Channel-1 Ch-2 - 18 36 IF = 5 A, di/dt = 100 A/μs, Ch-1 - 10 20 Body diode reverse recovery charge Qrr T nC J = 25 °C Ch-2 - 8 16 Channel-2 Ch-1 - 9.5 - Reverse recovery fall time ta IF = 5 A, di/dt = 100 A/μs, Ch-2 - 9 - T ns J = 25 °C Ch-1 - 9.5 - Reverse recovery rise time tb Ch-2 - 8.5 -
Notes
a. Guaranteed by design, not subject to production testing b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-1100-Rev. B, 30-Dec-2019
3
Document Number: 77182 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000