Datasheet BLF978P (Ampleon) - 9
Hersteller | Ampleon |
Beschreibung | HF / VHF power LDMOS transistor |
Seiten / Seite | 15 / 9 — BLF978P. HF / VHF power LDMOS transistor. Fig 11. Power gain as a … |
Dateiformat / Größe | PDF / 1.5 Mb |
Dokumentensprache | Englisch |
BLF978P. HF / VHF power LDMOS transistor. Fig 11. Power gain as a function of output power;
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BLF978P HF / VHF power LDMOS transistor
amp01286 amp01287 27 90 Gp G ηD (3) (3) (3) (2) (2) (2) (1) (1) (1) (4) (4) (4) (dB) (dB) (dB) (%) (%) (%) (5) (5) (5) 26 70 25 24 50 (1) (1) (1) 23 (2) (2) (2) (3) (3) (3) 30 (4) (4) (4) 22 (5) (5) (5) 21 10 0 300 600 900 1200 1500 0 300 600 900 1200 1500 PL (W) PL (W) IDq = 2 50 mA; f = 225 MHz; tp = 100 s; = 10 %. IDq = 2 50 mA; f = 225 MHz; tp = 100 s; = 10 %. (1) VDS = 50 V (1) VDS = 50 V (2) VDS = 45 V (2) VDS = 45 V (3) VDS = 40 V (3) VDS = 40 V (4) VDS = 35 V (4) VDS = 35 V (5) VDS = 30 V (5) VDS = 30 V
Fig 11. Power gain as a function of output power; Fig 12. Drain efficiency as a function of output power; typical values typical values
amp01288 amp01289 28 90 Gp G ηD (dB) (dB) (dB) (%) (%) (%) 27 (1) (1) (1) 70 (2) (2) (2) (3) (3) (3) 26 (4) (4) (4) (5) (5) (5) (5) (5) (5) (4) (4) (4) 25 (3) (3) (3) 50 (2) (2) (2) (1) (1) (1) 24 30 23 22 10 0 300 600 900 1200 1500 0 300 600 900 1200 1500 PL (W) PL (W) VDS = 50 V; f = 225 MHz; tp = 100 s; = 10 %. VDS = 50 V; f = 225 MHz; tp = 100 s; = 10 %. (1) IDq = 2 50 mA (1) IDq = 2 50 mA (2) IDq = 2 200 mA (2) IDq = 2 200 mA (3) IDq = 2 400 mA (3) IDq = 2 400 mA (4) IDq = 2 800 mA (4) IDq = 2 800 mA (5) IDq = 2 1400 mA (5) IDq = 2 1400 mA
Fig 13. Power gain as a function of output power; Fig 14. Drain efficiency as a function of output power; typical values typical values
BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 9 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents