Datasheet BLF978P (Ampleon) - 3
| Hersteller | Ampleon |
| Beschreibung | HF / VHF power LDMOS transistor |
| Seiten / Seite | 15 / 3 — BLF978P. HF / VHF power LDMOS transistor. Fig 1 |
| Dateiformat / Größe | PDF / 1.5 Mb |
| Dokumentensprache | Englisch |
BLF978P. HF / VHF power LDMOS transistor. Fig 1
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BLF978P HF / VHF power LDMOS transistor
amp01281 0.2 (7) (7) (7) Zth(j-c) t Z h(j-c) th(j-c) (6) (6) (6) (K/W) (K/W) (K/W) (5) (5) (5) (4) (4) (4) 0.16 (3) (3) (3) (2) (2) (2) (1) (1) (1) 0.12 0.08 0.04 0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse duration 6. Characteristics Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.94 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 394 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; 54 71.7 - A VDS = 10 V IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 54 - m ID = 13.79 A
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1.45 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 392 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 115 - pF BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 3 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
amp01281 0.2 (7) (7) (7) Zth(j-c) t Z h(j-c) th(j-c) (6) (6) (6) (K/W) (K/W) (K/W) (5) (5) (5) (4) (4) (4) 0.16 (3) (3) (3) (2) (2) (2) (1) (1) (1) 0.12 0.08 0.04 0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 tp (s) (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC)
Fig 1. Transient thermal impedance from junction to case as a function of pulse duration 6. Characteristics Table 6. DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 3.94 mA 108 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 394 mA 1.5 2.0 2.5 V IDSS drain leakage current VGS = 0 V; VDS = 50 V - - 2.8 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; 54 71.7 - A VDS = 10 V IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 280 nA RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; - 54 - m ID = 13.79 A
Table 7. AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Crs feedback capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 1.45 - pF Ciss input capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 392 - pF Coss output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz - 115 - pF BLF978P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2020. All rights reserved.
Product data sheet Rev. 1 — 3 April 2020 3 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 8. Test information 8.1 Ruggedness in class-AB operation 8.2 Impedance information 8.3 Test circuit 8.4 Graphical data 8.4.1 1-Tone CW pulsed 9. Package outline 10. Handling information 11. Abbreviations 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents