Datasheet SCT3160KL (Rohm) - 10
Hersteller | Rohm |
Beschreibung | N-channel SiC power MOSFET |
Seiten / Seite | 13 / 10 — SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. … |
Dateiformat / Größe | PDF / 716 Kb |
Dokumentensprache | Englisch |
SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
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SCT3160KL
Datasheet l
Electrical characteristic curves
Fig.19 Typical Switching Loss Fig.20 Typical Switching Loss vs. Drain - Source Voltage vs. Drain Current 140 560 T = 25ºC T = 25ºC a a 120 I =5A 480 V =600V D DD V = 18V/0V V = 18V/0V GS GS R =0W R =0W 100 G [mJ] 400 G L=750mH L=750mH [mJ] E : y : E 80 Eon rg 320 e rgy n ne 60 E 240 g E in Eon ng h hi 40 itc 160 itc w w E S off S 20 80 Eoff 0 0 200 400 600 800 1000 0 2 4 6 8 10 12 14 16 18 20 Drain - Source Voltage : V [V] Drain Current : I [A] DS D Fig.21 Typical Switching Loss vs. External Gate Resistance 560 T = 25ºC 480 a V =600V DD I =5A D 400 V = 18V/0V GS [mJ] L=750mH : E 320 rgy ne 240 E ng Eon hi 160 itc w S 80 Eoff 0 0 5 10 15 20 25 30 External Gate Resistance : R [W] G www.rohm.com
TSQ50211-SCT3160KL
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14.Jun.2018 - Rev.005